Open Access
Relative Refractory Period in an Excitable Semiconductor Laser
F Selmi
1
,
R. Braive
1
,
Rémy Braive
1
,
G. Beaudoin
1
,
I. Sagnes
1
,
Isabelle Sagnes
1
,
R. Kuszelewicz
1
,
S Barbay
1
,
Sylvain Barbay
1
1
Laboratoire de Photonique et de Nanostructures, LPN-CNRS UPR20, Route de Nozay, 91460 Marcoussis, France
|
Publication type: Journal Article
Publication date: 2014-05-07
scimago Q1
wos Q1
SJR: 2.856
CiteScore: 15.6
Impact factor: 9.0
ISSN: 00319007, 10797114
PubMed ID:
24856697
General Physics and Astronomy
Abstract
We report on experimental evidence of neuronlike excitable behavior in a micropillar laser with saturable absorber. We show that under a single pulsed perturbation the system exhibits subnanosecond response pulses and analyze the role of the laser bias pumping. Under a double pulsed excitation we study the absolute and relative refractory periods, similarly to what can be found in neural excitability, and interpret the results in terms of a dynamical inhibition mediated by the carrier dynamics. These measurements shed light on the analogy between optical and biological neurons and pave the way to fast spike-time coding based optical systems with a speed several orders of magnitude faster than their biological or electronic counterparts.
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Metrics
159
Total citations:
159
Citations from 2024:
27
(16.98%)
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Selmi F. et al. Relative Refractory Period in an Excitable Semiconductor Laser // Physical Review Letters. 2014. Vol. 112. No. 18. 183902
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Selmi F., Braive R., Braive R., Beaudoin G., Sagnes I., Sagnes I., Kuszelewicz R., Barbay S., Barbay S. Relative Refractory Period in an Excitable Semiconductor Laser // Physical Review Letters. 2014. Vol. 112. No. 18. 183902
Cite this
RIS
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TY - JOUR
DO - 10.1103/physrevlett.112.183902
UR - https://doi.org/10.1103/physrevlett.112.183902
TI - Relative Refractory Period in an Excitable Semiconductor Laser
T2 - Physical Review Letters
AU - Selmi, F
AU - Braive, R.
AU - Braive, Rémy
AU - Beaudoin, G.
AU - Sagnes, I.
AU - Sagnes, Isabelle
AU - Kuszelewicz, R.
AU - Barbay, S
AU - Barbay, Sylvain
PY - 2014
DA - 2014/05/07
PB - American Physical Society (APS)
IS - 18
VL - 112
PMID - 24856697
SN - 0031-9007
SN - 1079-7114
ER -
Cite this
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Copy
@article{2014_Selmi,
author = {F Selmi and R. Braive and Rémy Braive and G. Beaudoin and I. Sagnes and Isabelle Sagnes and R. Kuszelewicz and S Barbay and Sylvain Barbay},
title = {Relative Refractory Period in an Excitable Semiconductor Laser},
journal = {Physical Review Letters},
year = {2014},
volume = {112},
publisher = {American Physical Society (APS)},
month = {may},
url = {https://doi.org/10.1103/physrevlett.112.183902},
number = {18},
pages = {183902},
doi = {10.1103/physrevlett.112.183902}
}
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