Open Access
Open access
volume 112 issue 18 publication number 183902

Relative Refractory Period in an Excitable Semiconductor Laser

F Selmi 1
R. Braive 1
Rémy Braive 1
G. Beaudoin 1
I. Sagnes 1
R. Kuszelewicz 1
S Barbay 1
Sylvain Barbay 1
1
 
Laboratoire de Photonique et de Nanostructures, LPN-CNRS UPR20, Route de Nozay, 91460 Marcoussis, France
Publication typeJournal Article
Publication date2014-05-07
scimago Q1
wos Q1
SJR2.856
CiteScore15.6
Impact factor9.0
ISSN00319007, 10797114
General Physics and Astronomy
Abstract
We report on experimental evidence of neuronlike excitable behavior in a micropillar laser with saturable absorber. We show that under a single pulsed perturbation the system exhibits subnanosecond response pulses and analyze the role of the laser bias pumping. Under a double pulsed excitation we study the absolute and relative refractory periods, similarly to what can be found in neural excitability, and interpret the results in terms of a dynamical inhibition mediated by the carrier dynamics. These measurements shed light on the analogy between optical and biological neurons and pave the way to fast spike-time coding based optical systems with a speed several orders of magnitude faster than their biological or electronic counterparts.
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GOST Copy
Selmi F. et al. Relative Refractory Period in an Excitable Semiconductor Laser // Physical Review Letters. 2014. Vol. 112. No. 18. 183902
GOST all authors (up to 50) Copy
Selmi F., Braive R., Braive R., Beaudoin G., Sagnes I., Sagnes I., Kuszelewicz R., Barbay S., Barbay S. Relative Refractory Period in an Excitable Semiconductor Laser // Physical Review Letters. 2014. Vol. 112. No. 18. 183902
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1103/physrevlett.112.183902
UR - https://doi.org/10.1103/physrevlett.112.183902
TI - Relative Refractory Period in an Excitable Semiconductor Laser
T2 - Physical Review Letters
AU - Selmi, F
AU - Braive, R.
AU - Braive, Rémy
AU - Beaudoin, G.
AU - Sagnes, I.
AU - Sagnes, Isabelle
AU - Kuszelewicz, R.
AU - Barbay, S
AU - Barbay, Sylvain
PY - 2014
DA - 2014/05/07
PB - American Physical Society (APS)
IS - 18
VL - 112
PMID - 24856697
SN - 0031-9007
SN - 1079-7114
ER -
BibTex
Cite this
BibTex (up to 50 authors) Copy
@article{2014_Selmi,
author = {F Selmi and R. Braive and Rémy Braive and G. Beaudoin and I. Sagnes and Isabelle Sagnes and R. Kuszelewicz and S Barbay and Sylvain Barbay},
title = {Relative Refractory Period in an Excitable Semiconductor Laser},
journal = {Physical Review Letters},
year = {2014},
volume = {112},
publisher = {American Physical Society (APS)},
month = {may},
url = {https://doi.org/10.1103/physrevlett.112.183902},
number = {18},
pages = {183902},
doi = {10.1103/physrevlett.112.183902}
}
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