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Physical Review Letters, volume 33, issue 14, pages 827-830

Quantum States of Confined Carriers in Very ThinAlxGa1xAs-GaAs-AlxGa1xAsHeterostructures

R Dingle 1
W. Wiegmann 1
C.H. Henry 1
1
 
Bell Laboratories, Murray Hill, New Jersey 07974
Publication typeJournal Article
Publication date1974-09-30
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor8.6
ISSN00319007, 10797114
General Physics and Astronomy
Abstract
Quantum levels associated with the confinement of carriers in very thin, molecular-beam—grown AlxGa1−xAs−GaAs-Alx Ga1−xAs heterostructures result in pronounced structure in the GaAs optical absorption spectrum. Up to eight resolved exciton transitions, associated with different bound-electron and bound-hole states, have been observed. The heterostructure behaves as a simple rectangular potential well with a depth of ≈0.88ΔE g , for confining electrons and ≈0.12ΔE g for confining holes, where ΔE g is the difference in the semiconductor energy gaps.

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GOST |
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GOST Copy
Dingle R., Wiegmann W., Henry C. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures // Physical Review Letters. 1974. Vol. 33. No. 14. pp. 827-830.
GOST all authors (up to 50) Copy
Dingle R., Wiegmann W., Henry C. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures // Physical Review Letters. 1974. Vol. 33. No. 14. pp. 827-830.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1103/physrevlett.33.827
UR - https://doi.org/10.1103/physrevlett.33.827
TI - Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
T2 - Physical Review Letters
AU - Dingle, R
AU - Wiegmann, W.
AU - Henry, C.H.
PY - 1974
DA - 1974/09/30 00:00:00
PB - American Physical Society (APS)
SP - 827-830
IS - 14
VL - 33
SN - 0031-9007
SN - 1079-7114
ER -
BibTex |
Cite this
BibTex Copy
@article{1974_Dingle,
author = {R Dingle and W. Wiegmann and C.H. Henry},
title = {Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures},
journal = {Physical Review Letters},
year = {1974},
volume = {33},
publisher = {American Physical Society (APS)},
month = {sep},
url = {https://doi.org/10.1103/physrevlett.33.827},
number = {14},
pages = {827--830},
doi = {10.1103/physrevlett.33.827}
}
MLA
Cite this
MLA Copy
Dingle, R., et al. “Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures.” Physical Review Letters, vol. 33, no. 14, Sep. 1974, pp. 827-830. https://doi.org/10.1103/physrevlett.33.827.
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