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Physical Review Letters, volume 86, issue 17, pages 3903-3906

Single-mode Spontaneous Emission from a Single Quantum Dot in a Three-Dimensional Microcavity

G. S. SOLOMON 1, 2
M PELTON 1
Matthew Pelton 1
Y. Yamamoto 1, 3
Y.T. Yamamoto 1, 3
Publication typeJournal Article
Publication date2001-04-23
scimago Q1
wos Q1
SJR3.040
CiteScore16.5
Impact factor8.1
ISSN00319007, 10797114
General Physics and Astronomy
Abstract
The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single quantum dot spontaneous emission lifetime is reduced from the noncavity value of 1.3 ns to 280 ps, resulting in a single-mode spontaneous emission coupling efficiency of 78%.
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