Open Access
Physical Review Letters, volume 86, issue 17, pages 3903-3906
Single-mode Spontaneous Emission from a Single Quantum Dot in a Three-Dimensional Microcavity
G. S. SOLOMON
1, 2
,
M PELTON
1
,
Matthew Pelton
1
,
Y. Yamamoto
1, 3
,
Y.T. Yamamoto
1, 3
3
NTT Basic Research Laboratories, 3-1 Morinosoto-Wakamiya, Atsugi, Karagawa, 243-01, Japan
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Publication type: Journal Article
Publication date: 2001-04-23
Journal:
Physical Review Letters
scimago Q1
wos Q1
SJR: 3.040
CiteScore: 16.5
Impact factor: 8.1
ISSN: 00319007, 10797114
PubMed ID:
11329353
General Physics and Astronomy
Abstract
The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single quantum dot spontaneous emission lifetime is reduced from the noncavity value of 1.3 ns to 280 ps, resulting in a single-mode spontaneous emission coupling efficiency of 78%.
Found
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