Physical Review B, volume 42, issue 17, pages 11218-11231

Temperature-dependent exciton linewidths in semiconductors.

S. Rudin 1, 2
T.L. Reinecke 1
B. SEGALL 3
1
 
Naval Research Laboratory, Washington, D.C. 20375-5000
2
 
U. S. Army Electronic Technology and Devices Laboratory, Fort Monmouth, New Jersey 07703
Publication typeJournal Article
Publication date1990-12-15
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor3.7
ISSN24699950, 24699969, 10980121, 1550235X
Abstract
The temperature-dependent linewidths of excitons in semiconductors due to the interaction of the exciton with both LO phonons and with acoustic phonons are studied with use of a Green's-function approach in which the exciton-phonon interaction is treated perturbatively. The interaction between the excitons and the LO phonons is taken to be of the Fr\"ohlich form, and the contribution to the linewidth is obtained in closed form. In this case it is found that scattering of the exciton to both bound and continuum states is important and that it is important to treat the continuum states fully as Coulomb scattering states. In describing optical-absorption processes, the fact that absorption occurs from polariton states, which are states composed of excitons coupled to light, is taken into account. The linewidths due to the exciton\char21{}LO-phonon interaction are evaluated for a series of II-VI and III-V compound semiconductors, and are shown to account for the existing experimental results for temperatures \ensuremath{\gtrsim}80 K. The contributions to the linewidth due to the interaction of excitons with acoustic phonons via both the deformation potential and the piezoelectric couplings are treated, and it is found that the deformation-potential coupling dominates for all of the materials considered. Because of the small velocity of sound, scattering to only intraband intermediate states, i.e., those in which the internal exciton quantum numbers do not change, is found to contribute to the linewidth. In the case of acoustic phonons, it is found to be important to treat optical absorption as originating from polariton states in order to evaluate properly the magnitude of this contribution to the linewidth. The acoustic-phonon contribution to the linewidths is compared with experiment for temperatures \ensuremath{\lesssim}80 K, for which it dominates the temperature dependence.

Top-30

Citations by journals

10
20
30
40
50
60
70
80
Physical Review B
78 publications, 15.15%
Journal of Applied Physics
31 publications, 6.02%
Journal of Physical Chemistry C
22 publications, 4.27%
Journal of Luminescence
20 publications, 3.88%
Applied Physics Letters
16 publications, 3.11%
Advanced Optical Materials
13 publications, 2.52%
Nanoscale
11 publications, 2.14%
Journal of Physical Chemistry Letters
8 publications, 1.55%
Journal of Materials Chemistry C
8 publications, 1.55%
Nature Communications
7 publications, 1.36%
Semiconductor Science and Technology
7 publications, 1.36%
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
7 publications, 1.36%
Advanced Functional Materials
7 publications, 1.36%
ACS Photonics
6 publications, 1.17%
Physica E: Low-Dimensional Systems and Nanostructures
6 publications, 1.17%
Physical Review Letters
6 publications, 1.17%
Scientific Reports
6 publications, 1.17%
Journal Physics D: Applied Physics
6 publications, 1.17%
Advanced Materials
6 publications, 1.17%
ACS Nano
6 publications, 1.17%
Superlattices and Microstructures
5 publications, 0.97%
Journal of Physics Condensed Matter
5 publications, 0.97%
Journal of Alloys and Compounds
5 publications, 0.97%
Physica Status Solidi (B): Basic Research
5 publications, 0.97%
Inorganic Chemistry
5 publications, 0.97%
Nano Letters
5 publications, 0.97%
Chemistry of Materials
5 publications, 0.97%
Physical Chemistry Chemical Physics
5 publications, 0.97%
RSC Advances
5 publications, 0.97%
10
20
30
40
50
60
70
80

Citations by publishers

10
20
30
40
50
60
70
80
90
American Physical Society (APS)
89 publications, 17.28%
American Chemical Society (ACS)
75 publications, 14.56%
Elsevier
73 publications, 14.17%
American Institute of Physics (AIP)
56 publications, 10.87%
Wiley
54 publications, 10.49%
IOP Publishing
37 publications, 7.18%
Royal Society of Chemistry (RSC)
37 publications, 7.18%
Springer Nature
30 publications, 5.83%
Pleiades Publishing
10 publications, 1.94%
Optical Society of America
8 publications, 1.55%
Multidisciplinary Digital Publishing Institute (MDPI)
7 publications, 1.36%
Japan Society of Applied Physics
6 publications, 1.17%
SPIE
2 publications, 0.39%
Materials Research Society
2 publications, 0.39%
IEEE
2 publications, 0.39%
Polska Akademia Nauk
2 publications, 0.39%
Cambridge University Press
1 publication, 0.19%
American Scientific Publishers
1 publication, 0.19%
Lithuanian Physical Society
1 publication, 0.19%
Walter de Gruyter
1 publication, 0.19%
Proceedings of the National Academy of Sciences (PNAS)
1 publication, 0.19%
American Association for the Advancement of Science (AAAS)
1 publication, 0.19%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 0.19%
10
20
30
40
50
60
70
80
90
  • We do not take into account publications without a DOI.
  • Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
  • Statistics recalculated weekly.

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
Share
Cite this
GOST |
Cite this
GOST Copy
Rudin S. et al. Temperature-dependent exciton linewidths in semiconductors. // Physical Review B. 1990. Vol. 42. No. 17. pp. 11218-11231.
GOST all authors (up to 50) Copy
Rudin S., Reinecke T., SEGALL B. Temperature-dependent exciton linewidths in semiconductors. // Physical Review B. 1990. Vol. 42. No. 17. pp. 11218-11231.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1103/PhysRevB.42.11218
UR - https://doi.org/10.1103/PhysRevB.42.11218
TI - Temperature-dependent exciton linewidths in semiconductors.
T2 - Physical Review B
AU - Rudin, S.
AU - Reinecke, T.L.
AU - SEGALL, B.
PY - 1990
DA - 1990/12/15 00:00:00
PB - American Physical Society (APS)
SP - 11218-11231
IS - 17
VL - 42
SN - 2469-9950
SN - 2469-9969
SN - 1098-0121
SN - 1550-235X
ER -
BibTex |
Cite this
BibTex Copy
@article{1990_Rudin,
author = {S. Rudin and T.L. Reinecke and B. SEGALL},
title = {Temperature-dependent exciton linewidths in semiconductors.},
journal = {Physical Review B},
year = {1990},
volume = {42},
publisher = {American Physical Society (APS)},
month = {dec},
url = {https://doi.org/10.1103/PhysRevB.42.11218},
number = {17},
pages = {11218--11231},
doi = {10.1103/PhysRevB.42.11218}
}
MLA
Cite this
MLA Copy
Rudin, S., et al. “Temperature-dependent exciton linewidths in semiconductors..” Physical Review B, vol. 42, no. 17, Dec. 1990, pp. 11218-11231. https://doi.org/10.1103/PhysRevB.42.11218.
Found error?