Physical Review B, volume 61, issue 20, pages R13349-R13352

Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions

V. I. KLIMOV 1
A A Mikhailovsky 1
A. A. Mikhailovsky 1
D.W. McBranch 1
C. A. Leatherdale 2
M G Bawendi 2
Publication typeJournal Article
Publication date2000-05-15
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor3.7
ISSN24699950, 24699969, 10980121, 1550235X
Abstract
To evaluate the role of nonphonon energy relaxation mechanisms in quantum dots and in particular the role of electron-hole (e-h) interactions, we have studied femtosecond carrier dynamics in CdSe colloidal nanoparticles in which the e-h separation (coupling) is controlled using different types of surface ligands. In dots capped with hole accepting molecules, the e-h coupling is strongly reduced after the hole is transferred to a capping group. By re-exciting an electron within the conduction band at different stages of hole transfer and monitoring its relaxation back into the ground state, we observe a more than tenfold increase in the electron relaxation time (from 250 fs to 3 ps) after the completion of the hole transfer to the capping molecule. This strongly indicates that electron relaxation in quantum dots is dominated not by phonon emission but by the e-h energy transfer.

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KLIMOV V. I. et al. Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions // Physical Review B. 2000. Vol. 61. No. 20. p. R13349-R13352.
GOST all authors (up to 50) Copy
KLIMOV V. I., Klimov V. I., Mikhailovsky A. A., Mikhailovsky A. A., McBranch D., Leatherdale C. A., Bawendi M. G., Bawendi M. G. Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions // Physical Review B. 2000. Vol. 61. No. 20. p. R13349-R13352.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1103/physrevb.61.r13349
UR - https://doi.org/10.1103/physrevb.61.r13349
TI - Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions
T2 - Physical Review B
AU - KLIMOV, V. I.
AU - Mikhailovsky, A A
AU - McBranch, D.W.
AU - Leatherdale, C. A.
AU - Bawendi, M G
AU - Klimov, Victor I.
AU - Mikhailovsky, A. A.
AU - Bawendi, Moungi G.
PY - 2000
DA - 2000/05/15 00:00:00
PB - American Physical Society (APS)
SP - R13349-R13352
IS - 20
VL - 61
SN - 2469-9950
SN - 2469-9969
SN - 1098-0121
SN - 1550-235X
ER -
BibTex |
Cite this
BibTex Copy
@article{2000_KLIMOV,
author = {V. I. KLIMOV and A A Mikhailovsky and D.W. McBranch and C. A. Leatherdale and M G Bawendi and Victor I. Klimov and A. A. Mikhailovsky and Moungi G. Bawendi},
title = {Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions},
journal = {Physical Review B},
year = {2000},
volume = {61},
publisher = {American Physical Society (APS)},
month = {may},
url = {https://doi.org/10.1103/physrevb.61.r13349},
number = {20},
pages = {R13349--R13352},
doi = {10.1103/physrevb.61.r13349}
}
MLA
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MLA Copy
KLIMOV, V. I., et al. “Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions.” Physical Review B, vol. 61, no. 20, May. 2000, pp. R13349-R13352. https://doi.org/10.1103/physrevb.61.r13349.
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