Physical Review B, volume 81, issue 11, publication number 115439

Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope

M. R. Hummon 1
A J Stollenwerk 1
A. Stollenwerk 1
V. Narayanamurti 1
Polina Anikeeva 2
P O Anikeeva 2
M. J. Panzer 2
V. Wood 2
Vanessa Wood 2
V Bulović 2
Vladimir Bulović 2
Publication typeJournal Article
Publication date2010-03-22
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor3.7
ISSN24699950, 24699969, 10980121, 1550235X
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Abstract
We use a scanning tunneling microscope to probe single-electron charging phenomena in individual CdSe/ZnS (core/shell) quantum dots (QDs) at room temperature. The QDs are deposited on top of a bare Au thin film and form a double-barrier tunnel junction (DBTJ) between the tip, QD, and substrate. Analysis of room-temperature hysteresis in the current-voltage $(IV)$ tunneling spectra, is consistent with trapped charge(s) presenting an additional potential barrier to tunneling, a measure of the Coulomb blockade. The paper describes the first direct electrical measurement of the trap-state energy on individual QDs. Manipulation of the charge occupation of the QD, verified by measuring the charging energy, $(61.4\ifmmode\pm\else\textpm\fi{}2.4)\text{ }\text{meV}$, and analysis of the DBTJ, show trap states $\ensuremath{\sim}1.09\text{ }\text{eV}$ below the QD conduction-band edge. In addition, the detrapping time, a measure of the tunneling barrier thickness, is determined to have an upper time limit of 250 ms. We hypothesize that the charge is trapped in a quantum-dot surface state.

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Hummon M. R. et al. Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope // Physical Review B. 2010. Vol. 81. No. 11. 115439
GOST all authors (up to 50) Copy
Hummon M. R., Stollenwerk A. J., Stollenwerk A., Narayanamurti V., Anikeeva P. O., Anikeeva P., Panzer M. J., Wood V., Wood V., Bulović V., Bulović V. Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope // Physical Review B. 2010. Vol. 81. No. 11. 115439
RIS |
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RIS Copy
TY - JOUR
DO - 10.1103/physrevb.81.115439
UR - https://doi.org/10.1103/physrevb.81.115439
TI - Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope
T2 - Physical Review B
AU - Hummon, M. R.
AU - Stollenwerk, A J
AU - Narayanamurti, V.
AU - Anikeeva, P O
AU - Panzer, M. J.
AU - Wood, V.
AU - Bulović, V
AU - Stollenwerk, A.
AU - Anikeeva, Polina
AU - Wood, Vanessa
AU - Bulović, Vladimir
PY - 2010
DA - 2010/03/22 00:00:00
PB - American Physical Society (APS)
IS - 11
VL - 81
SN - 2469-9950
SN - 2469-9969
SN - 1098-0121
SN - 1550-235X
ER -
BibTex
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BibTex Copy
@article{2010_Hummon,
author = {M. R. Hummon and A J Stollenwerk and V. Narayanamurti and P O Anikeeva and M. J. Panzer and V. Wood and V Bulović and A. Stollenwerk and Polina Anikeeva and Vanessa Wood and Vladimir Bulović},
title = {Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope},
journal = {Physical Review B},
year = {2010},
volume = {81},
publisher = {American Physical Society (APS)},
month = {mar},
url = {https://doi.org/10.1103/physrevb.81.115439},
number = {11},
doi = {10.1103/physrevb.81.115439}
}
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