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том 9 издание 4 номер публикации 041040

Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4

Yujie Chen 1
L.-X. Xu 2, 3, 4
J.- H. Li 1
Yi-Wei Li 5
Hongyuan Wang 2, 4
C. F. Zhang 6
Hao Li 7, 8
Yang Wu 1, 8
A LIANG 2, 9
Cheng Chen 2, 9
S. Jung 10
C. Cacho 10
Y.H. MAO 6
Shuai Liu 2
M. X. WANG 2
Yanfeng Guo 2
Yong Xu 1, 11, 12
Zhi LIU 2
L. X. Yang 1, 11
Yulin Chen 1, 2, 5
Тип публикацииJournal Article
Дата публикации2019-11-21
scimago Q1
wos Q1
БС1
SJR6.415
CiteScore25.7
Impact factor15.7
ISSN21603308
General Physics and Astronomy
Краткое описание
Topological quantum materials coupled with magnetism can provide a platform for realizing rich exotic physical phenomena, including quantum anomalous Hall effect, axion electrodynamics and Majorana fermions. However, these unusual effects typically require extreme experimental conditions such as ultralow temperature or sophisticate material growth and fabrication. Recently, new intrinsic magnetic topological insulators were proposed in MnBi2Te4-family compounds - on which rich topological effects could be realized under much relaxed experimental conditions. However, despite the exciting progresses, the detailed electronic structures observed in this family of compounds remain controversial up to date. Here, combining the use of synchrotron and laser light sources, we carried out comprehensive and high resolution angle-resolved photoemission spectroscopy studies on MnBi2Te4, and clearly identified its topological electronic structures including the characteristic gapless topological surface states. In addition, the temperature evolution of the energy bands clearly reveals their interplay with the magnetic phase transition by showing interesting differences for the bulk and surface states, respectively. The identification of the detailed electronic structures of MnBi2Te4 will not only help understand its exotic properties, but also pave the way for the design and realization of novel phenomena and applications.
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Chen Y. et al. Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4 // Physical Review X. 2019. Vol. 9. No. 4. 041040
ГОСТ со всеми авторами (до 50) Скопировать
Chen Y., Xu L., Li J. H., Li Y., Wang H., Zhang C. F., Li H., Wu Y., LIANG A., Chen C., Jung S., Cacho C., MAO Y., Liu S., WANG M. X., Guo Y., Xu Y., LIU Z., Yang L., Chen Y. Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4 // Physical Review X. 2019. Vol. 9. No. 4. 041040
RIS |
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TY - JOUR
DO - 10.1103/PhysRevX.9.041040
UR - https://doi.org/10.1103/PhysRevX.9.041040
TI - Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4
T2 - Physical Review X
AU - Chen, Yujie
AU - Xu, L.-X.
AU - Li, J.- H.
AU - Li, Yi-Wei
AU - Wang, Hongyuan
AU - Zhang, C. F.
AU - Li, Hao
AU - Wu, Yang
AU - LIANG, A
AU - Chen, Cheng
AU - Jung, S.
AU - Cacho, C.
AU - MAO, Y.H.
AU - Liu, Shuai
AU - WANG, M. X.
AU - Guo, Yanfeng
AU - Xu, Yong
AU - LIU, Zhi
AU - Yang, L. X.
AU - Chen, Yulin
PY - 2019
DA - 2019/11/21
PB - American Physical Society (APS)
IS - 4
VL - 9
SN - 2160-3308
ER -
BibTex
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BibTex (до 50 авторов) Скопировать
@article{2019_Chen,
author = {Yujie Chen and L.-X. Xu and J.- H. Li and Yi-Wei Li and Hongyuan Wang and C. F. Zhang and Hao Li and Yang Wu and A LIANG and Cheng Chen and S. Jung and C. Cacho and Y.H. MAO and Shuai Liu and M. X. WANG and Yanfeng Guo and Yong Xu and Zhi LIU and L. X. Yang and Yulin Chen},
title = {Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4},
journal = {Physical Review X},
year = {2019},
volume = {9},
publisher = {American Physical Society (APS)},
month = {nov},
url = {https://doi.org/10.1103/PhysRevX.9.041040},
number = {4},
pages = {041040},
doi = {10.1103/PhysRevX.9.041040}
}