Journal of Applied Crystallography, volume 30, issue 5, pages 623-627

Formation and Growth of Semiconductor PbTe Nanocrystals in a Borosilicate Glass Matrix

O. L. Alves
L. C. Barbosa
Publication typeJournal Article
Publication date1997-10-01
Q1
Q1
SJR1.561
CiteScore10.0
Impact factor5.2
ISSN00218898, 16005767
General Biochemistry, Genetics and Molecular Biology
Abstract

Pb- and Te-doped borosilicate glasses are transformed by appropriate heat treatment into a composite material consisting of a vitreous matrix in which semiconductor PbTe nanocrystals are embedded. This composite exhibits interesting non-linear optical properties in the infrared region, in the range 10–20 000 Å. The shape and size distribution of the nanocrystals and the kinetics of their growth were studied by small-angle X-ray scattering (SAXS) during in situ isothermal treatment at 923 K. The experimental results indicate that nanocrystals are nearly spherical and have an average radius increasing from 16 to 33 Å after 2 h at 923 K, the relative size dispersion being time-invariant and approximately equal to 8%. This investigation demonstrates that the kinetics of nanocrystal growth are governed by the classic mechanism of atomic diffusion. The radius of nanocrystals, deduced by applying the simple Efros & Efros [Sov. Phys. Semicond. (1982), 16, 772–775] model using the energy values corresponding to the exciton peaks of optical absorption spectra, does not agree with the average radius determined by SAXS.

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Craievich A. F., Alves O. L., Barbosa L. C. Formation and Growth of Semiconductor PbTe Nanocrystals in a Borosilicate Glass Matrix // Journal of Applied Crystallography. 1997. Vol. 30. No. 5. pp. 623-627.
GOST all authors (up to 50) Copy
Craievich A. F., Alves O. L., Barbosa L. C. Formation and Growth of Semiconductor PbTe Nanocrystals in a Borosilicate Glass Matrix // Journal of Applied Crystallography. 1997. Vol. 30. No. 5. pp. 623-627.
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RIS Copy
TY - JOUR
DO - 10.1107/s0021889897001799
UR - https://doi.org/10.1107/s0021889897001799
TI - Formation and Growth of Semiconductor PbTe Nanocrystals in a Borosilicate Glass Matrix
T2 - Journal of Applied Crystallography
AU - Craievich, Aldo F.
AU - Alves, O. L.
AU - Barbosa, L. C.
PY - 1997
DA - 1997/10/01
PB - International Union of Crystallography (IUCr)
SP - 623-627
IS - 5
VL - 30
SN - 0021-8898
SN - 1600-5767
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{1997_Craievich,
author = {Aldo F. Craievich and O. L. Alves and L. C. Barbosa},
title = {Formation and Growth of Semiconductor PbTe Nanocrystals in a Borosilicate Glass Matrix},
journal = {Journal of Applied Crystallography},
year = {1997},
volume = {30},
publisher = {International Union of Crystallography (IUCr)},
month = {oct},
url = {https://doi.org/10.1107/s0021889897001799},
number = {5},
pages = {623--627},
doi = {10.1107/s0021889897001799}
}
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Craievich, Aldo F., et al. “Formation and Growth of Semiconductor PbTe Nanocrystals in a Borosilicate Glass Matrix.” Journal of Applied Crystallography, vol. 30, no. 5, Oct. 1997, pp. 623-627. https://doi.org/10.1107/s0021889897001799.
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