Proceedings of the IEEE, volume 77, issue 8, pages 1280-1286
Flux transfer devices
Y. Harada
1
,
W Hioe
1
,
E. GOTO
2
1
ERATO/JRDC, Tokyo, Japan
|
Publication type: Journal Article
Publication date: 1989-01-01
Journal:
Proceedings of the IEEE
scimago Q1
SJR: 6.085
CiteScore: 46.4
Impact factor: 23.2
ISSN: 00189219, 15582256
DOI:
10.1109/5.34126
Electrical and Electronic Engineering
Abstract
Flux transfer device theory is reviewed. In such devices, generalized magnetic flux, defined as the time integral of voltage, is used to describe the device characteristics. The Josephson junction and inductor are the main circuit elements in flux transfer devices, because they maintain a constant value for the time integral of voltage. Flux transfer devices are based on either an RF SQUID (superconducting quantum interference device) or a fluxon device. Four devices, including the parametric quantron and the quantum flux parametron, are reviewed as applications of the RF SQUID. The fluxon feedback oscillator and a soliton device are also reviewed as applications of fluxon devices. The quantum flux parametron is then described. The parametron principle and the fundamental properties of the quantum flux parametron such as gain, switching speed, and power dissipation are discussed. Logic circuits and a memory cell are also reviewed. A novel analog-to-digital converter is proposed as an application of the quantum flux parametron.< >
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