Institute of Electrical and Electronics Engineers (IEEE)

Ultra-scaled MOCVD MoS₂ MOSFETs with 42nm contact pitch and 250µA/µm drain current

Quentin Smets ¹

Benjamin Groven ¹

Matty Caymax ¹

I. Radu ¹

Goutham Arutchelvan ¹

Julien Jussot ¹

Devin Verreck ¹

I. Asselberghs ¹

Ankit Nalin Mehta ¹

Anurag Gaur ¹

Dennis Lin ¹

S El Kazzi ¹

Hide authors affiliations Show authors affiliations: 1 affiliation

[Imec Leuven, Belgium.] |

Publication type: Proceedings Article

Publication date: 2019-12-01

Institute of Electrical and Electronics Engineers (IEEE)

DOI: 10.1109/IEDM19573.2019.8993650

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Abstract

We show that downscaling the top-contact length to 13nm induces no penalty on the electrical characteristics for CVD MoS ₂ FETs. We demonstrate this for devices with different gate-oxides and operating in both channel and contact-limited regimes, thus confirming carrier injection at the edge of the contact metal. Consequently, we have scaled the device footprint achieving an I _on =250μA/μm and excellent SS _min =80mV/dec for 50nm SiO ₂ and 4nm HfO ₂ gate oxides, respectively.

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