A Review on Negative Capacitance Based Transistors

Continuous scaling of transistor dimensions to satisfy the increasing demands for higher performance and energy efficiency over the last 50 years is leading the conventional field effect transistors (FETs) to their fundamental material and physical limits. Further improvement of transistor operation and reliability will require new technology and device structure like negative capacitance based transistor. Besides, the roadmap for silicon device technology is approaching the point, where radical material alternatives must be introduced. Negative capacitance based conventional transistor that is often viewed as an adverse effect of short channel lengths in the conventional metal oxide field effect transistors (MOSFETs) has emerged as a promising current injection mechanism to allow the reduction of operating voltage beyond the capabilities of the MOSFET technology. In this paper includes a review summarizing the progresses in the development of the negative capacitance technology, and the experimentally observed performances of different transistors.