Institute of Electrical and Electronics Engineers (IEEE)

UTBOX SOI Structures with High-k Stacks of Hafnia and Alumina

V P Popov ¹

Mikhail Ilnitsky ¹

Andrey Miakonkikh ²

Valentin Antonov ¹

Vladimir Vdovin ³

Konstantin V. Rudenko ²

Anton Gutakovskiy ³

Ida E Tyschenko ³

V F Lukichev ⁴

Hide authors affiliations Show authors affiliations: 4 affiliations

Laboratory of Silicon Material Science, Rzhanov Institute of Semiconductor Physics SB RAS,Novosibirsk,Russia |

Laboratory of Microstructuring and Submicron Devices, Valiev Institute of Physics and Technology RAS, Moscow, Russia |

Laboratory of Nanodiagnostics and Nanolithography, Rzhanov Institute of Semiconductor Physics SB RAS,Novosibirsk,Russia |

⁴

Valiev Institute of Physics and Technology RAS, Moscow, Russia |

Publication type: Proceedings Article

Publication date: 2019-04-01

Institute of Electrical and Electronics Engineers (IEEE)

DOI: 10.1109/eurosoi-ulis45800.2019.9041896

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Abstract

PEALD grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown that the minimal density of interface states (IFS) < 10 ¹² cm ⁻² and the maximal one with a memory window MW ~ 1 V could be obtained by the right choice of a high-k dielectric layer sequence and thermal processing.

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