IEEE Sensors Journal, volume 20, issue 13, pages 6841-6848

Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging

Epimitheas Georgitzikis 1, 2
Pawel E Malinowski 1
Yunlong Li 1
Jorick Maes 3, 4
Luis Moreno Hagelsieb 1
Stefano Guerrieri 1
Zeger Hens 3, 4
Paul Heremans 1, 2
David Cheyns 1
Publication typeJournal Article
Publication date2020-07-01
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor4.3
ISSN1530437X, 15581748
Electrical and Electronic Engineering
Instrumentation
Abstract
Colloidal quantum dots based on lead sulfide (PbS) are very attractive materials for the realization of novel image sensors. They offer low cost synthesis, compatibility with a variety of substrates and processing on large area. The tunable band gap enables selective light detection from the visible wavelengths up to the short-wave-infrared (SWIR). This work describes the roadmap towards the integration of quantum dot photodiodes (QDPD) on top of a Si based CMOS read-out circuit. Photodiodes using an n-p junction architecture are fabricated on Si substrates, showing a dark current of 30 nA/cm 2 at -1 V reverse bias, EQE above 20% and specific detectivity above 1012 cm Hz 1/2 W -1 at the wavelength of 940 nm. Efficiency is improved by reducing absorption in the top contact through optical design. Furthermore, photolithographic patterning of the thin-film stack is introduced for the first time, showing the feasibility of pixel pitches down to 40 μm, opening the way towards high resolution monolithic infrared imagers and the incorporation of infrared and visible sensitive pixels side by side.

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GOST Copy
Georgitzikis E. et al. Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging // IEEE Sensors Journal. 2020. Vol. 20. No. 13. pp. 6841-6848.
GOST all authors (up to 50) Copy
Georgitzikis E., Malinowski P. E., Li Y., Maes J., Hagelsieb L. M., Guerrieri S., Hens Z., Heremans P., Cheyns D. Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging // IEEE Sensors Journal. 2020. Vol. 20. No. 13. pp. 6841-6848.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1109/jsen.2019.2933741
UR - https://doi.org/10.1109/jsen.2019.2933741
TI - Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging
T2 - IEEE Sensors Journal
AU - Georgitzikis, Epimitheas
AU - Malinowski, Pawel E
AU - Li, Yunlong
AU - Maes, Jorick
AU - Hagelsieb, Luis Moreno
AU - Guerrieri, Stefano
AU - Hens, Zeger
AU - Heremans, Paul
AU - Cheyns, David
PY - 2020
DA - 2020/07/01 00:00:00
PB - IEEE
SP - 6841-6848
IS - 13
VL - 20
SN - 1530-437X
SN - 1558-1748
ER -
BibTex |
Cite this
BibTex Copy
@article{2020_Georgitzikis,
author = {Epimitheas Georgitzikis and Pawel E Malinowski and Yunlong Li and Jorick Maes and Luis Moreno Hagelsieb and Stefano Guerrieri and Zeger Hens and Paul Heremans and David Cheyns},
title = {Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging},
journal = {IEEE Sensors Journal},
year = {2020},
volume = {20},
publisher = {IEEE},
month = {jul},
url = {https://doi.org/10.1109/jsen.2019.2933741},
number = {13},
pages = {6841--6848},
doi = {10.1109/jsen.2019.2933741}
}
MLA
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MLA Copy
Georgitzikis, Epimitheas, et al. “Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging.” IEEE Sensors Journal, vol. 20, no. 13, Jul. 2020, pp. 6841-6848. https://doi.org/10.1109/jsen.2019.2933741.
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