Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate
Joe F Mcglone
1
,
Zhanbo Xia
1
,
Yuewei Zhang
1
,
Chandan Joishi
2
,
Saurabh Lodha
2
,
Siddharth Rajan
3
,
Steven A. Ringel
3
,
Aaron R Arehart
1
Publication type: Journal Article
Publication date: 2018-07-01
scimago Q1
wos Q2
SJR: 1.150
CiteScore: 7.6
Impact factor: 4.5
ISSN: 07413106, 15580563
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Abstract
Threshold voltage instability was observed on β-Ga
2
O
3
transistors using double-pulsed current-voltage and constant drain current deep level transient spectroscopy (DLTS) measurements. A total instability of 0.78 V was attributed to two distinct trap levels, at E
C
-0.70 and E
C
-0.77 eV, which need to be mitigated for future applications. The traps are likely located near the gate-drain edge and below the delta-doped layer, which is determined through the DLTS technique and an understanding of the fill and empty biasing conditions. The trap modulation was consistent with a gate leakage-based trap filling mechanism, which was demonstrated. It is likely that Fe is playing a role in the observed dispersion due to the close proximity of the Fe substrate.
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Mcglone J. F. et al. Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate // IEEE Electron Device Letters. 2018. Vol. 39. No. 7. pp. 1042-1045.
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Mcglone J. F., Xia Z., Zhang Y., Joishi C., Lodha S., Rajan S., Ringel S. A., Arehart A. R. Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate // IEEE Electron Device Letters. 2018. Vol. 39. No. 7. pp. 1042-1045.
Cite this
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TY - JOUR
DO - 10.1109/led.2018.2843344
UR - https://doi.org/10.1109/led.2018.2843344
TI - Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate
T2 - IEEE Electron Device Letters
AU - Mcglone, Joe F
AU - Xia, Zhanbo
AU - Zhang, Yuewei
AU - Joishi, Chandan
AU - Lodha, Saurabh
AU - Rajan, Siddharth
AU - Ringel, Steven A.
AU - Arehart, Aaron R
PY - 2018
DA - 2018/07/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 1042-1045
IS - 7
VL - 39
SN - 0741-3106
SN - 1558-0563
ER -
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@article{2018_Mcglone,
author = {Joe F Mcglone and Zhanbo Xia and Yuewei Zhang and Chandan Joishi and Saurabh Lodha and Siddharth Rajan and Steven A. Ringel and Aaron R Arehart},
title = {Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate},
journal = {IEEE Electron Device Letters},
year = {2018},
volume = {39},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {jul},
url = {https://doi.org/10.1109/led.2018.2843344},
number = {7},
pages = {1042--1045},
doi = {10.1109/led.2018.2843344}
}
Cite this
MLA
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Mcglone, Joe F., et al. “Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate.” IEEE Electron Device Letters, vol. 39, no. 7, Jul. 2018, pp. 1042-1045. https://doi.org/10.1109/led.2018.2843344.