IEEE Electron Device Letters, volume 40, issue 7, pages 1088-1091
Flexible Memristive Device Based on WSe2 Quantum Dots Sandwiched Between Two Poly (Methyl Methacrylate) Layers
Publication type: Journal Article
Publication date: 2019-07-01
Journal:
IEEE Electron Device Letters
Q1
Q2
SJR: 1.250
CiteScore: 8.2
Impact factor: 4.1
ISSN: 07413106, 15580563
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Abstract
In this letter, we demonstrate the fabrication of flexible memristive devices using tungsten di-selenide (WSe
2
) quantum dots (QDs) as the active layer. The WSe
2
QDs were synthesized by facile two-step technique consisting of solvothermal and sonication processes to utilize the charge-trapping sites in the memristive devices. The sizes of as-synthesized WSe
2
QDs, as determined from the transmission electron microscopy image, were in the range between 3 and 5 nm. Current-voltage (I-V) curves for the flexible memristive devices based on nanocomposites consisting of WSe
2
QDs sandwiched between two poly (methyl methacrylate) (PMMA) layers showed remarkable bi-stable behavior before and after bending. The ON/OFF ratio of the memory devices before and after bending were approximately 1 × 10
2
and 1 × 10
2
, respectively. The devices showed the nonvolatile memory effect with a retention time of more than 7 × 10
2
s. The endurance number of ON/OFF switching cycles for the devices was 1 × 10
2
. The bipolar resistive switching behavior was described on the basis of the I-V results by analyzing the effect of space charge.
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Veeramalai C. P. et al. Flexible Memristive Device Based on WSe2 Quantum Dots Sandwiched Between Two Poly (Methyl Methacrylate) Layers // IEEE Electron Device Letters. 2019. Vol. 40. No. 7. pp. 1088-1091.
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Veeramalai C. P., Li F., Guo T., Kim T. W. Flexible Memristive Device Based on WSe2 Quantum Dots Sandwiched Between Two Poly (Methyl Methacrylate) Layers // IEEE Electron Device Letters. 2019. Vol. 40. No. 7. pp. 1088-1091.
Cite this
RIS
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TY - JOUR
DO - 10.1109/led.2019.2918701
UR - https://doi.org/10.1109/led.2019.2918701
TI - Flexible Memristive Device Based on WSe2 Quantum Dots Sandwiched Between Two Poly (Methyl Methacrylate) Layers
T2 - IEEE Electron Device Letters
AU - Veeramalai, Chandrasekar Perumal
AU - Li, Fushan
AU - Guo, Tailiang
AU - Kim, Tae Whan
PY - 2019
DA - 2019/07/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 1088-1091
IS - 7
VL - 40
SN - 0741-3106
SN - 1558-0563
ER -
Cite this
BibTex (up to 50 authors)
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@article{2019_Veeramalai,
author = {Chandrasekar Perumal Veeramalai and Fushan Li and Tailiang Guo and Tae Whan Kim},
title = {Flexible Memristive Device Based on WSe2 Quantum Dots Sandwiched Between Two Poly (Methyl Methacrylate) Layers},
journal = {IEEE Electron Device Letters},
year = {2019},
volume = {40},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {jul},
url = {https://doi.org/10.1109/led.2019.2918701},
number = {7},
pages = {1088--1091},
doi = {10.1109/led.2019.2918701}
}
Cite this
MLA
Copy
Veeramalai, Chandrasekar Perumal, et al. “Flexible Memristive Device Based on WSe2 Quantum Dots Sandwiched Between Two Poly (Methyl Methacrylate) Layers.” IEEE Electron Device Letters, vol. 40, no. 7, Jul. 2019, pp. 1088-1091. https://doi.org/10.1109/led.2019.2918701.