Institute of Electrical and Electronics Engineers (IEEE)

IEEE Electron Device Letters

, том 44 , издание 5 , страницы 781-784

Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity

Kunnan Zhou ¹

Longqiang Shan ¹

Yuliang Zhang ¹

De Lu ²

Yuanming Ma ¹

Xing Chen ¹

L. Z. Luo ¹

Chunyan Wu ¹

Скрыть аффилиации авторов Показать аффилиации авторов: 2 аффилиации

School of Microelectronics, Hefei University of Technology, Hefei, China |

Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan, China |

Тип публикации: Journal Article

Дата публикации: 2023-05-01

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Electron Device Letters

scimago Q1

wos Q2

БС1

SJR: 1.150

CiteScore: 7.6

Impact factor: 4.5

ISSN: 07413106, 15580563

DOI: 10.1109/led.2023.3262589

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Electronic, Optical and Magnetic Materials

Electrical and Electronic Engineering

Краткое описание

AlGaN/GaN high electron mobility transistor (HEMT) has attracted great attention in ultraviolet photodetectors (UVPDs) due to the ultrahigh responsivity and high photocurrent arising from the two-dimensional electron gas (2DEG) formed in the AlGaN/GaN interface. In this letter, AlGaN/GaN HEMT-based UVPD was fabricated through fluorine plasma treatment using

$\text{C}_{{4}}\text{F}_{{8}}$

gas. The dark current of the device was greatly lowered and the persistent photoconductivity (PPC) effect was effectively suppressed, leading to a high responsivity of

${1}.{3}\times {10} ^{{4}}$

$\text{W}^{-{1}}$

and a high specific detectivity of

${1}.{8}\times {10} ^{{15}}$

Jones. The present work provides a facile and cost-effective strategy for the fabrication of high-performance AlGaN/GaN HEMT-based UVPDs.

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ГОСТ |

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Zhou K. et al. Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity // IEEE Electron Device Letters. 2023. Vol. 44. No. 5. pp. 781-784.

ГОСТ со всеми авторами (до 50) Скопировать

Zhou K., Shan L., Zhang Y., Lu D., Ma Y., Chen X., Luo L. Z., Wu C. Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity // IEEE Electron Device Letters. 2023. Vol. 44. No. 5. pp. 781-784.

RIS |

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TY - JOUR

DO - 10.1109/led.2023.3262589

UR - https://ieeexplore.ieee.org/document/10083134/

TI - Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity

T2 - IEEE Electron Device Letters

AU - Zhou, Kunnan

AU - Shan, Longqiang

AU - Zhang, Yuliang

AU - Lu, De

AU - Ma, Yuanming

AU - Chen, Xing

AU - Luo, L. Z.

AU - Wu, Chunyan

PY - 2023

DA - 2023/05/01

PB - Institute of Electrical and Electronics Engineers (IEEE)

SP - 781-784

IS - 5

VL - 44

SN - 0741-3106

SN - 1558-0563

ER -

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@article{2023_Zhou,

author = {Kunnan Zhou and Longqiang Shan and Yuliang Zhang and De Lu and Yuanming Ma and Xing Chen and L. Z. Luo and Chunyan Wu},

title = {Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity},

journal = {IEEE Electron Device Letters},

year = {2023},

volume = {44},

publisher = {Institute of Electrical and Electronics Engineers (IEEE)},

month = {may},

url = {https://ieeexplore.ieee.org/document/10083134/},

number = {5},

pages = {781--784},

doi = {10.1109/led.2023.3262589}

}

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Zhou, Kunnan, et al. “Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity.” IEEE Electron Device Letters, vol. 44, no. 5, May. 2023, pp. 781-784. https://ieeexplore.ieee.org/document/10083134/.