IEEE Electron Device Letters, volume 45, issue 10, pages 1819-1822

Low-Energy Spiking Neural Network using Ge₄Sb₆Te₇ Phase Change Memory Synapses

Shafin Bin Hamid ^{1, 2}

A I Khan ³

Huairuo Zhang ⁴

Albert Davydov ^{4, 5}

Eric Pop ³

Department of Electrical and Electronic Engineering, Bangladesh University of Engineering & Technology, West Palashi, Dhaka, Bangladesh |

Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, West Palashi, Dhaka, Bangladesh |

Department of Electrical Engineering, Stanford University, Stanford, CA, USA |

⁴

Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, USA |

⁵

Material Science & Engineering Division, National Institute of Standards & Technology, USA |

Publication type: Journal Article

Publication date: 2024-10-01

Institute of Electrical and Electronics Engineers (IEEE)

Journal: IEEE Electron Device Letters

scimago Q1

wos Q2

SJR: 1.250

CiteScore: 8.2

Impact factor: 4.1

ISSN: 07413106, 15580563

DOI: 10.1109/led.2024.3439532

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Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Journal

IEEE Electron Device Letters

scimago Q1

wos Q2

SJR

1.250

CiteScore

8.2

Impact factor

4.1

ISSN

07413106 (Print)

15580563 (Electronic)

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Low-Energy Spiking Neural Network using Ge4Sb6Te7 Phase Change Memory Synapses

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Low-Energy Spiking Neural Network using Ge₄Sb₆Te₇ Phase Change Memory Synapses