IEEE Photonics Technology Letters, volume 16, issue 10, pages 2233-2235
DC Drift of X-Cut LiNbO$_3$ Modulators
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JDS Uniphase Corporation, Bloomfield, CT, USA
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Publication type: Journal Article
Publication date: 2004-10-01
Journal:
IEEE Photonics Technology Letters
scimago Q2
SJR: 0.684
CiteScore: 5.0
Impact factor: 2.3
ISSN: 10411135, 19410174
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Abstract
DC drift of unbuffered dc bias electrode port of x-cut LiNbO/sub 3/ (LN) modulators is investigated. Unlike buffered LN modulators, their dc drift is irreversible and relatively suppressed after biased aging. Additionally, they show rolling-over-type drift and do not drift divergently. Extended temperature-voltage accelerated drift tests find temperature activation energy of 1.2 eV and a proportional relationship between drift rates and initially applied bias voltages. Such drift behaviors characteristic of unbuffered x-LN can demonstrate their high reliability with respect to dc bias drift.
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