том 54 издание 4 страницы 3890-3901

GaN-Based High-Power-Density Electrolytic-Free Universal Input LED Driver

Тип публикацииJournal Article
Дата публикации2018-07-01
SCImago Q1
Tоп 10% SCImago
WOS Q1
БС1
SJR1.685
CiteScore11.5
Impact factor5.2
ISSN00939994, 19399367
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Control and Systems Engineering
Краткое описание
This paper presents a high-power-density high-power-factor GaN-based two-stage electrolytic-free offline LED driver. The LED driver achieves high power density through the use of a hybrid film-ceramic stacked switched capacitor (SSC) energy buffer, and a comprehensive optimization methodology that evaluates various converter topologies and designs and minimizes overall system volume while maintaining high efficiency. Based on this optimization approach, a totem-pole bridgeless boost power factor correction (PFC) converter is selected for the first stage, while a stacked-input isolated LLC dc-dc converter is selected for the second stage. The optimization procedure also minimizes the passive volume of the SSC energy buffer incorporating the volumetric energy density of commercially available capacitors. The optimized SSC energy buffer utilized in the proposed LED driver has 50% less passive volume than a capacitor-only solution. A 600-W prototype LED driver designed using the proposed approach for universal input voltage (90 - 305 V rms ) and 24-V output voltage is built and tested. The PFC stage achieves a peak efficiency of 98% while the LLC stage achieves a peak efficiency of 95%. The prototyped LED driver achieves a power density of 28 W/in 3 .
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ГОСТ |
Цитировать
Pervaiz S., Kumar A., Afridi K. K. GaN-Based High-Power-Density Electrolytic-Free Universal Input LED Driver // IEEE Transactions on Industry Applications. 2018. Vol. 54. No. 4. pp. 3890-3901.
ГОСТ со всеми авторами (до 50) Скопировать
Pervaiz S., Kumar A., Afridi K. K. GaN-Based High-Power-Density Electrolytic-Free Universal Input LED Driver // IEEE Transactions on Industry Applications. 2018. Vol. 54. No. 4. pp. 3890-3901.
RIS |
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TY - JOUR
DO - 10.1109/tia.2018.2817620
UR - https://doi.org/10.1109/tia.2018.2817620
TI - GaN-Based High-Power-Density Electrolytic-Free Universal Input LED Driver
T2 - IEEE Transactions on Industry Applications
AU - Pervaiz, Saad
AU - Kumar, Ashish
AU - Afridi, K K
PY - 2018
DA - 2018/07/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 3890-3901
IS - 4
VL - 54
SN - 0093-9994
SN - 1939-9367
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2018_Pervaiz,
author = {Saad Pervaiz and Ashish Kumar and K K Afridi},
title = {GaN-Based High-Power-Density Electrolytic-Free Universal Input LED Driver},
journal = {IEEE Transactions on Industry Applications},
year = {2018},
volume = {54},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {jul},
url = {https://doi.org/10.1109/tia.2018.2817620},
number = {4},
pages = {3890--3901},
doi = {10.1109/tia.2018.2817620}
}
MLA
Цитировать
Pervaiz, Saad, et al. “GaN-Based High-Power-Density Electrolytic-Free Universal Input LED Driver.” IEEE Transactions on Industry Applications, vol. 54, no. 4, Jul. 2018, pp. 3890-3901. https://doi.org/10.1109/tia.2018.2817620.
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