Defect Identification in β-Ga₂O₃ Schottky Barrier Diodes with electron radiation and annealing regulating

Identifying the impact of native/irradiated traps on electrical properties is vital for the implementation of high-performance gallium oxide (Ga ₂ O ₃ ) power devices. In this work, the effect of electron irradiation and isochronal thermal annealing on the electrical properties of vertical Ni/Au β-Ga ₂ O ₃ Schottky barrier diode are explored. Majority and minority carrier traps in Ni/Au β-Ga ₂ O ₃ diode after irradiation and annealing are characterized using deep level transient spectroscopy (DLTS) technique. We observe three trap states at E _V +0.402 eV (H1), E _C -0.626 eV (E1), and E _C -0.755 eV (E2), in which electron trap E2 is dominant, and the instability of electrical properties of the tested sample is attributed to the electron trap E2. Combining the formation energies and transition levels of β-Ga ₂ O ₃ intrinsic defects calculated by first-principles method, it is speculated that trap H1 is attributed to V _GaI -2V _OⅡ (+5/+3) or V _GaⅡ -2 _VOⅡ (+3/+1), trap E1 is related to V _GaI -V _OI (-1/-3) or O _ic (-1/-2), and trap E2 is associated with O _id (0/-2) or O _GaII (-1/-3). Additionally, trap E2 is also linked to the extrinsic defect Fe _Ga . Based on the experimental and theoretical calculations of Ni/Au β-Ga ₂ O ₃ diode, the exact physical origin of radiation-induced defects and its annealing derivation process are detailed discussed.