High-power pulsed semiconductor lasers (905 nm) with an ultra-wide aperture (800m) based on epitaxially integrated triple heterostructures
Тип публикации: Proceedings Article
Дата публикации: 2021-06-21
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Today, widening the aperture is considered as one of approaches in development of high-power pulsed semiconductor lasers [1] , [2] . Aperture widening increases the linearity of the light-current characteristic in the region of high currents by reducing the current density, which is important for high-power pulsed laser sources. In addition, in contrast to typical designs of laser diode arrays with a width of the aperture of 100-200 µm, the aperture widening increases the fill factor. Here we study the approach based on the use of epitaxially integrated laser heterostructures and an ultra-wide apertures for high-power pulsed laser sources.
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Slipchenko S. et al. High-power pulsed semiconductor lasers (905 nm) with an ultra-wide aperture (800m) based on epitaxially integrated triple heterostructures // 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2021. 2021.
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Slipchenko S., Podoskin A. A., Gavrina P. S., Pikhtin N. A., Koplev P. S., Bagaev T. A., Ladugin M. A., Padalitsa A. A., Marmalyuk A. A. High-power pulsed semiconductor lasers (905 nm) with an ultra-wide aperture (800m) based on epitaxially integrated triple heterostructures // 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2021. 2021.
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TY - CPAPER
DO - 10.1109/CLEO/Europe-EQEC52157.2021.9541707
UR - https://doi.org/10.1109/CLEO/Europe-EQEC52157.2021.9541707
TI - High-power pulsed semiconductor lasers (905 nm) with an ultra-wide aperture (800m) based on epitaxially integrated triple heterostructures
T2 - 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2021
AU - Slipchenko, S.O.
AU - Podoskin, Aleksandr A
AU - Gavrina, Polina S
AU - Pikhtin, Nikita A
AU - Koplev, Petr S
AU - Bagaev, Timur A
AU - Ladugin, Maxim A
AU - Padalitsa, Anatoliy A
AU - Marmalyuk, Alexander A
PY - 2021
DA - 2021/06/21
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -
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@inproceedings{2021_Slipchenko,
author = {S.O. Slipchenko and Aleksandr A Podoskin and Polina S Gavrina and Nikita A Pikhtin and Petr S Koplev and Timur A Bagaev and Maxim A Ladugin and Anatoliy A Padalitsa and Alexander A Marmalyuk},
title = {High-power pulsed semiconductor lasers (905 nm) with an ultra-wide aperture (800m) based on epitaxially integrated triple heterostructures},
year = {2021},
month = {jun},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)}
}