The Scaling of Cu-Cu Hybrid Bonding For High Density 3D Chip Stacking

Y KAGAWA 1
S Hida 1
Yuka Kobayashi 1
K. Takahashi 1
S Miyanomae 1
M. Kawamura 1
H. Kawashima 2
H Yamagishi 2
Takaya Hirano 2
K. Tatani 2
Hiroki Nakayama 1
K. Ohno 2
H. Iwamoto 2
S. Kadomura 1
1
 
Sony Semiconductor Manufacturing Corporation, Japan
2
 
Sony Semiconductor Solutions Corporation, Japan
Publication typeProceedings Article
Publication date2019-03-01
Abstract
We have successfully improved the scaling of Cu-Cu hybrid bonding. In this study, 3 um-pitch and 3M Cu-Cu connections with sufficient electrical properties and reliabilities were achieved. The ultra-fine pitch Cu-Cu connections correspond to the 0.75x scaling of conventional Cu-Cu hybrid bonding that we previously reported. Our high density 3D chip stacking technology is expected to enhance not only the function of back-illuminated CMOS image sensors (BI-CIS) but also that of coming 3D stacked semiconductor devices.

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Citations by journals

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IEEE Transactions on Electron Devices
2 publications, 9.52%
Journal of Electronic Packaging, Transactions of the ASME
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1 publication, 4.76%
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Russian Chemical Reviews
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IEEE
9 publications, 42.86%
Multidisciplinary Digital Publishing Institute (MDPI)
2 publications, 9.52%
ASME
2 publications, 9.52%
Springer Nature
1 publication, 4.76%
Institute of Electronics, Information and Communications Engineers (IEICE)
1 publication, 4.76%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 4.76%
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