GeTe Thin Film – Material for Optic Devices of Mid and Far-Infrared Ranges

Тип публикации: Proceedings Article
Дата публикации: 2020-11-02
Institute of Electrical and Electronics Engineers (IEEE)
Краткое описание
Thin film phase-change materials (PCM) based on germanium telluride (GeTe, GeSbTe, GeSbSeTe) are widely used in photonic devices. In this work, we studied thin films GeTe grown on substrates with different temperatures; the obtained spectral and electrophysical characteristics of such films demonstrate a strong dependence on the growth conditions. The research results confirm the prospects for the use of this material in the development of controlled optical memory devices.
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Institute of Electrical and Electronics Engineers (IEEE)
Institute of Electrical and Electronics Engineers (IEEE), 1, 100%
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Ionin V. V. et al. GeTe Thin Film – Material for Optic Devices of Mid and Far-Infrared Ranges // 2020 International Conference Laser Optics (ICLO). 2020.
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Ionin V. V., Eliseev N. N., Burtsev A. A., Kiselev A. V., Pankov M., Mikhalevsky V., Lotin A. A. GeTe Thin Film – Material for Optic Devices of Mid and Far-Infrared Ranges // 2020 International Conference Laser Optics (ICLO). 2020.
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TY - CPAPER
DO - 10.1109/ICLO48556.2020.9285918
UR - https://doi.org/10.1109/ICLO48556.2020.9285918
TI - GeTe Thin Film – Material for Optic Devices of Mid and Far-Infrared Ranges
T2 - 2020 International Conference Laser Optics (ICLO)
AU - Ionin, V V
AU - Eliseev, N N
AU - Burtsev, A A
AU - Kiselev, A V
AU - Pankov, M.A.
AU - Mikhalevsky, Vladimir
AU - Lotin, A A
PY - 2020
DA - 2020/11/02
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -
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@inproceedings{2020_Ionin,
author = {V V Ionin and N N Eliseev and A A Burtsev and A V Kiselev and M.A. Pankov and Vladimir Mikhalevsky and A A Lotin},
title = {GeTe Thin Film – Material for Optic Devices of Mid and Far-Infrared Ranges},
year = {2020},
month = {nov},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)}
}