Institute of Electrical and Electronics Engineers (IEEE)

GeTe Thin Film – Material for Optic Devices of Mid and Far-Infrared Ranges

V V Ionin ¹

N N Eliseev ¹

A A Burtsev ¹

A V Kiselev ¹

M.A. Pankov ¹

Vladimir Mikhalevsky ¹

A A Lotin ¹

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Institute on Laser and Information Technologies of Russian Academy of Sciences,Branch of Federal Scientific Research Center Crystallography and Photonics of Russian Academy of Sciences,Shatura,Russian Federation

Kurchatov Complex of Crystallography and Photonics of NRC «Kurchatov Institute»

Institute On Laser and Information Technologies

Publication type: Proceedings Article

Publication date: 2020-11-02

Institute of Electrical and Electronics Engineers (IEEE)

DOI: 10.1109/ICLO48556.2020.9285918

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Abstract

Thin film phase-change materials (PCM) based on germanium telluride (GeTe, GeSbTe, GeSbSeTe) are widely used in photonic devices. In this work, we studied thin films GeTe grown on substrates with different temperatures; the obtained spectral and electrophysical characteristics of such films demonstrate a strong dependence on the growth conditions. The research results confirm the prospects for the use of this material in the development of controlled optical memory devices.

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Institute of Electrical and Electronics Engineers (IEEE)

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Laboratory of Nanophotonics and Nanoplasmonics

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