High fill-factor kW-level tunnel-coupled diode laser bar ($\lambda=910\ \text{nm}$) for 100-ns pulse sources

A A Podoskin 1
, 
S O Slipchenko 1
, 
D A Veselov 1
, 
V A Strelets 1
, 
N A Rudova 1
, 
N. A. PIKHTIN 1
, 
T A Bagaev 2
, 
M A Ladugin 2
, 
A.A. Marmalyuk 2
, 
P. S. KOP'EV 1
1
 
2
 
Stel'makh Research and Development Institute “Polyus”,Moscow,Russia | 
Publication type: Proceedings Article
Publication date: 2022-06-20
Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Pulsed 910 nm laser sources based on triple tunnel-coupled AlGaAs/InGaAs/GaAs heterostructures were developed and studied. High fill-factor (96%) microbars with $3\times 800\ \mu \mathrm{m}$ aperture were fabricated and studied under pumping by high-current pulse source (up to 750A/130ns/1kHz). Peak optical power up to 1150W at 25°C and 905W at 75°C were demonstrated.
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