Effect of current localization on the output optical power in high-power laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures
Тип публикации: Proceedings Article
Дата публикации: 2022-06-20
SJR: —
CiteScore: —
Impact factor: —
ISSN:
Краткое описание
The operation of a semiconductor laser-thyristor based on AlGaAs/GaAs/InGaAs heterostructures with a p-GaAs base thickness of $4.4\ \mu \mathrm{m}$ was under study. At the same supply voltage of 22 V, the drive current amplitude of 138 mA gives a more noticeable current localization near mesa-stripe edge in comparison with the case of the drive current of 1 mA.
Найдено
Ничего не найдено, попробуйте изменить настройки фильтра.
Вы ученый?
Создайте профиль, чтобы получать персональные рекомендации коллег, конференций и новых статей.
Метрики
0
Всего цитирований:
0
Цитировать
ГОСТ |
RIS |
BibTex
Цитировать
ГОСТ
Скопировать
Gavrina P. S. et al. Effect of current localization on the output optical power in high-power laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures // 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. 2022.
ГОСТ со всеми авторами (до 50)
Скопировать
Gavrina P. S., Podoskin A. A., Shushkanov I. V., Soboleva O. S., Miroshnikov I. V., Slipchenko S. O., Pikhtin N. A., Bagaev T. A., Ladugin M. A., Marmalyuk A., Simakov V. A. Effect of current localization on the output optical power in high-power laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures // 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. 2022.
Цитировать
RIS
Скопировать
TY - CPAPER
DO - 10.1109/ICLO54117.2022.9839936
UR - https://doi.org/10.1109/ICLO54117.2022.9839936
TI - Effect of current localization on the output optical power in high-power laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures
T2 - 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss
AU - Gavrina, Polina S
AU - Podoskin, Aleksandr A
AU - Shushkanov, Ilya V
AU - Soboleva, Olga S
AU - Miroshnikov, Igor V
AU - Slipchenko, Sergey O
AU - Pikhtin, Nikita A
AU - Bagaev, T A
AU - Ladugin, M A
AU - Marmalyuk, A.A.
AU - Simakov, V A
PY - 2022
DA - 2022/06/20
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -
Цитировать
BibTex (до 50 авторов)
Скопировать
@inproceedings{2022_Gavrina,
author = {Polina S Gavrina and Aleksandr A Podoskin and Ilya V Shushkanov and Olga S Soboleva and Igor V Miroshnikov and Sergey O Slipchenko and Nikita A Pikhtin and T A Bagaev and M A Ladugin and A.A. Marmalyuk and V A Simakov},
title = {Effect of current localization on the output optical power in high-power laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures},
year = {2022},
month = {jun},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)}
}