Anisotropic Texturing Amorphous Silicon Thin Films by Femtosecond Laser Irradiation

Тип публикацииProceedings Article
Дата публикации2022-06-20
Краткое описание
Femtosecond laser treatment allows to fabricate periodic structures at amorphous hydrogenated silicon surfaces on areas more than a square millimeter. The period of the structures is near the laser wavelength and determines by the nonequilibrium electrons concentration at high power laser excitation. The obtained structures possess a pronounced electrophysical anisotropy.

Вы ученый?

Создайте профиль, чтобы получать персональные рекомендации коллег, конференций и новых статей.
 Войти с ORCID
Метрики
0
Поделиться
Цитировать
ГОСТ |
Цитировать
Zabotnov S. V. et al. Anisotropic Texturing Amorphous Silicon Thin Films by Femtosecond Laser Irradiation // 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. 2022.
ГОСТ со всеми авторами (до 50) Скопировать
Zabotnov S. V., Shuleiko D. V., Martyshov M. N., Presnov D. E., Golovan L. A., Kashkarov P. K. Anisotropic Texturing Amorphous Silicon Thin Films by Femtosecond Laser Irradiation // 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. 2022.
RIS |
Цитировать
TY - CPAPER
DO - 10.1109/ICLO54117.2022.9840223
UR - https://doi.org/10.1109/ICLO54117.2022.9840223
TI - Anisotropic Texturing Amorphous Silicon Thin Films by Femtosecond Laser Irradiation
T2 - 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss
AU - Zabotnov, S V
AU - Shuleiko, D V
AU - Martyshov, M. N.
AU - Presnov, D E
AU - Golovan, L. A.
AU - Kashkarov, P. K.
PY - 2022
DA - 2022/06/20
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -
BibTex
Цитировать
BibTex (до 50 авторов) Скопировать
@inproceedings{2022_Zabotnov,
author = {S V Zabotnov and D V Shuleiko and M. N. Martyshov and D E Presnov and L. A. Golovan and P. K. Kashkarov},
title = {Anisotropic Texturing Amorphous Silicon Thin Films by Femtosecond Laser Irradiation},
year = {2022},
month = {jun},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)}
}
Ошибка в публикации?