Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness

J. Jourdon ¹

S Lhostis ²

S. Moreau ³

J. Chossat ²

M. Arnoux ⁴

C. Sart ²

Y Henrion ²

P. Lamontagne ²

L. Arnaud ³

N Bresson ³

V. Balan ³

C Euvrard ³

Y. Exbrayat ³

D. Scevola ²

E Deloffre ²

S Mermoz ²

Andreas Martin ⁴

H Bilgen ²

F. Andre ²

Christine Charles ²

D. Bouchu ³

A. Farcy ²

S Guillaumet ²

A. Jouve ³

H. Fre´mont ¹

S Cheramy ³

Hide authors affiliations Show authors affiliations: 4 affiliations

University of Bordeaux, IMS Laboratory, Talence, France |

STmicroelectronics, Crolles, France |

CEA-Leti, Grenoble, France |

⁴

STMicroelectronics, Grenoble, France |

Publication type: Proceedings Article

Publication date: 2018-12-01

Institute of Electrical and Electronics Engineers (IEEE)

DOI: 10.1109/IEDM.2018.8614570

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Abstract

Hybrid bonding is a high-density technology for 3D integration but further interconnect scaling down could jeopardize electrical and reliability performance. A study of the influence of hybrid bonding pitch shrinkage on a 3D stacked backside illuminated CMOS image sensor was performed from a process, device performance and robustness perspectives, from 8.8 μm down to 1.44 μm bonding pitches. As a result no defect related to smaller bonding pads was evidenced neither by thermal cycling nor by electromigration, thus validating fine-pitch hybrid bonding robustness and introduction for next generation image sensors.

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Institute of Electrical and Electronics Engineers (IEEE)