Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness

J. Jourdon 1
S Lhostis 2
S. Moreau 3
J. Chossat 2
M. Arnoux 4
C. Sart 2
Y Henrion 2
P. Lamontagne 2
L. Arnaud 3
N Bresson 3
V. Balan 3
C Euvrard 3
Y. Exbrayat 3
D. Scevola 2
E Deloffre 2
S Mermoz 2
Andreas Martin 4
H Bilgen 2
F. Andre 2
Christine Charles 2
D. Bouchu 3
A. Farcy 2
S Guillaumet 2
A. Jouve 3
H. Fre´mont 1
S Cheramy 3
2
 
STmicroelectronics, Crolles, France
3
 
CEA-Leti, Grenoble, France
4
 
STMicroelectronics, Grenoble, France
Тип публикацииProceedings Article
Дата публикации2018-12-01
Краткое описание
Hybrid bonding is a high-density technology for 3D integration but further interconnect scaling down could jeopardize electrical and reliability performance. A study of the influence of hybrid bonding pitch shrinkage on a 3D stacked backside illuminated CMOS image sensor was performed from a process, device performance and robustness perspectives, from 8.8 μm down to 1.44 μm bonding pitches. As a result no defect related to smaller bonding pads was evidenced neither by thermal cycling nor by electromigration, thus validating fine-pitch hybrid bonding robustness and introduction for next generation image sensors.
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