High-definition Visible-SWIR InGaAs Image Sensor using Cu-Cu Bonding of III-V to Silicon Wafer

S. Manda 1
R. Matsumoto 1
S. SAITO 1
S. Maruyama 1
H. Minari 1
T. Takachi 1
N. fujii 1
Y. Yamamoto 1
Y. Zaizen 1
T. Hirano 1
H. Iwamoto 1
1
 
Sony Semiconductor Solutions Corporation
Publication typeProceedings Article
Publication date2019-12-01
Abstract
We developed a back-illuminated InGaAs image sensor with 1280x1040 pixels at 5-um pitch by using Cu-Cu hybridization connecting different materials, a III-V InGaAs/InP of photodiode array (PDA), and a silicon readout integrated circuit (ROIC). A new process architecture using an InGaAs/InP dies-to-silicon wafer and Cu-Cu bonding was established for high productivity and pixel-pitch scaling. We achieved low dark current and high sensitivity for wavelengths ranging from visible to short-wavelength infrared (SWIR).

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