High-definition Visible-SWIR InGaAs Image Sensor using Cu-Cu Bonding of III-V to Silicon Wafer

S. Manda ¹

R. Matsumoto ¹

S. SAITO ¹

S. Maruyama ¹

H. Minari ¹

T. Takachi ¹

N. fujii ¹

Y. Yamamoto ¹

Y. Zaizen ¹

T. Hirano ¹

H. Iwamoto ¹

Hide authors affiliations Show authors affiliations: 1 affiliation

Sony Semiconductor Solutions Corporation

Publication type: Proceedings Article

Publication date: 2019-12-01

Institute of Electrical and Electronics Engineers (IEEE)

DOI: 10.1109/IEDM19573.2019.8993432

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Abstract

We developed a back-illuminated InGaAs image sensor with 1280x1040 pixels at 5-um pitch by using Cu-Cu hybridization connecting different materials, a III-V InGaAs/InP of photodiode array (PDA), and a silicon readout integrated circuit (ROIC). A new process architecture using an InGaAs/InP dies-to-silicon wafer and Cu-Cu bonding was established for high productivity and pixel-pitch scaling. We achieved low dark current and high sensitivity for wavelengths ranging from visible to short-wavelength infrared (SWIR).

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