Institute of Electrical and Electronics Engineers (IEEE)

, volume 2021-August

Source and Localization of the PT-Symmetric Terahertz Photoconductivity in Topological Hg1-xCdxTe – Based Heterostructures

Aleksei Kazakov ¹

Alexandra V Galeeva ¹

Aleksei I Artamkin ¹

Anton V. Ikonnikov ¹

Ludmila I. Ryabova ²

S. A. Dvoretsky ³

Nikolai N. Mikhailov ³

Mikhail I Bannikov ⁴

Sergey Danilov ⁵

Dmitry R. Khokhlov ^{6, 7}

Hide authors affiliations Show authors affiliations: 7 affiliations

M.V. Lomonosov Moscow State University,Physics Department,Moscow,Russia,119991 |

M.V. Lomonosov Moscow State University,Chemistry Department,Moscow,Russia,119991 |

Siberian Branch of RAS,A.V. Rzhanov Institute of Semiconductor Physics,Novosibirsk,Russia,630090 |

⁴

P.N. Lebedev Physical Institute of RAS,Moscow,Russia,119991 |

⁵

University of Regensburg,Faculty of Physics,Regensburg,Germany,D-93053 |

⁶

M.V. Lomonosov Moscow State University, Moscow, Russia |

⁷

P.N. Lebedev Physical institute of RAS, Moscow, Russia |

Publication type: Proceedings Article

Publication date: 2021-08-29

Institute of Electrical and Electronics Engineers (IEEE)

DOI: 10.1109/IRMMW-THz50926.2021.9566891

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Abstract

We have shown that in heterostructures based on the topological phase Hg 1-x Cd x Te, the properties of two-dimensional topological states formed at the trivial buffer - topological film heterointerface differ from the states at the topological film - vacuum interface, and it is the former that are responsible for the appearance of PT-symmetric photoconductivity. It has been shown that the source of nonequilibrium electrons is the film bulk, while the place of manifestation of the effect is the trivial buffer - topological film heterointerface.

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