Effect of compensation and near-infrared lasing on donor-related terahertz photoluminescence in GaAs/AlGaAs quantum wells

The terahertz radiation associated with optical electron transitions involving donor states in GaAs/AlGaAs quantum wells is investigated under conditions of interband optical excitation. It has been shown that the near-infrared stimulated emission arising at high optical pumping levels as well as impurity compensation can substantially influence on the intensity and spectra of terahertz photoluminescence related to the optical transitions of electrons from the first electron subband and excited donor states to the ground donor states in quantum wells.