Effect of compensation and near-infrared lasing on donor-related terahertz photoluminescence in GaAs/AlGaAs quantum wells

Publication type: Proceedings Article
Publication date: 2021-08-29
Institute of Electrical and Electronics Engineers (IEEE)
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Abstract
The terahertz radiation associated with optical electron transitions involving donor states in GaAs/AlGaAs quantum wells is investigated under conditions of interband optical excitation. It has been shown that the near-infrared stimulated emission arising at high optical pumping levels as well as impurity compensation can substantially influence on the intensity and spectra of terahertz photoluminescence related to the optical transitions of electrons from the first electron subband and excited donor states to the ground donor states in quantum wells.
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Makhov I. S. et al. Effect of compensation and near-infrared lasing on donor-related terahertz photoluminescence in GaAs/AlGaAs quantum wells // 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). 2021.
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Makhov I. S., Panevin V., Vorobjev L. E., Firsov D. Effect of compensation and near-infrared lasing on donor-related terahertz photoluminescence in GaAs/AlGaAs quantum wells // 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). 2021.
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TY - CPAPER
DO - 10.1109/IRMMW-THz50926.2021.9567116
UR - https://doi.org/10.1109/IRMMW-THz50926.2021.9567116
TI - Effect of compensation and near-infrared lasing on donor-related terahertz photoluminescence in GaAs/AlGaAs quantum wells
T2 - 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
AU - Makhov, Ivan S.
AU - Panevin, V.Yu.
AU - Vorobjev, Leonid E
AU - Firsov, D.A.
PY - 2021
DA - 2021/08/29
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -
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@inproceedings{2021_Makhov,
author = {Ivan S. Makhov and V.Yu. Panevin and Leonid E Vorobjev and D.A. Firsov},
title = {Effect of compensation and near-infrared lasing on donor-related terahertz photoluminescence in GaAs/AlGaAs quantum wells},
year = {2021},
month = {aug},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)}
}