Integral and hybrid approaches for high-power laser pulse generation (900-1060nm) by semiconductor heterostructures with electrical bistability

Andrey Lunev 1
Nikita Pikhtin 1
Timur Bagaev 2
Aleksandr Marmalyuk 2
Vladimir Simakov 2
Piotr Kopev 1
Тип публикацииProceedings Article
Дата публикации2021-10-10
Краткое описание
The paper considers two approaches for high-power/frequency laser pulse generation. The integral approach is the most compact and is based on a single crystal laser-thyristor. The hybrid approach is based on a heterothyristor/laser diode vertical stack, which utilizes a heterothyristor array as a current switch
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Slipchenko S. et al. Integral and hybrid approaches for high-power laser pulse generation (900-1060nm) by semiconductor heterostructures with electrical bistability // Conference Digest - IEEE International Semiconductor Laser Conference. 2021.
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Slipchenko S., Lunev A., Pikhtin N., Bagaev T., Ladugin M., Marmalyuk A., Simakov V., Kopev P. Integral and hybrid approaches for high-power laser pulse generation (900-1060nm) by semiconductor heterostructures with electrical bistability // Conference Digest - IEEE International Semiconductor Laser Conference. 2021.
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TY - CPAPER
DO - 10.1109/ISLC51662.2021.9615866
UR - https://doi.org/10.1109/ISLC51662.2021.9615866
TI - Integral and hybrid approaches for high-power laser pulse generation (900-1060nm) by semiconductor heterostructures with electrical bistability
T2 - Conference Digest - IEEE International Semiconductor Laser Conference
AU - Slipchenko, S.O.
AU - Lunev, Andrey
AU - Pikhtin, Nikita
AU - Bagaev, Timur
AU - Ladugin, Maxim
AU - Marmalyuk, Aleksandr
AU - Simakov, Vladimir
AU - Kopev, Piotr
PY - 2021
DA - 2021/10/10
PB - Institute of Electrical and Electronics Engineers (IEEE)
SN - 0899-9406
ER -
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@inproceedings{2021_Slipchenko,
author = {S.O. Slipchenko and Andrey Lunev and Nikita Pikhtin and Timur Bagaev and Maxim Ladugin and Aleksandr Marmalyuk and Vladimir Simakov and Piotr Kopev},
title = {Integral and hybrid approaches for high-power laser pulse generation (900-1060nm) by semiconductor heterostructures with electrical bistability},
year = {2021},
month = {oct},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)}
}