Institute of Electrical and Electronics Engineers (IEEE)

IEEE Sensors Journal

, том 20 , издание 13 , страницы 6841-6848

Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging

Epimitheas Georgitzikis ^{1, 2}

Pawel E Malinowski ¹

Yunlong Li ¹

Jorick Maes ^{3, 4}

Luis Moreno Hagelsieb ¹

Stefano Guerrieri ¹

Zeger Hens ^{3, 4}

Paul Heremans ^{1, 2}

David Cheyns ¹

Скрыть аффилиации авторов Показать аффилиации авторов: 4 аффилиации

IMEC, Leuven, Belgium |

ESAT, Katholieke Universiteit Leuven, Leuven, Belgium |

Physics and Chemistry of Nanostructures, Ghent University, Ghent, Belgium |

⁴

Center for Nanoand Biophotonics (NB-Photonics), Ghent University, Ghent, Belgium |

Тип публикации: Journal Article

Дата публикации: 2020-07-01

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Sensors Journal

scimago Q1

wos Q1

БС1

SJR: 1.039

CiteScore: 8.2

Impact factor: 4.5

ISSN: 1530437X, 15581748, 23799153

DOI: 10.1109/jsen.2019.2933741

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Electrical and Electronic Engineering

Instrumentation

Краткое описание

Colloidal quantum dots based on lead sulfide (PbS) are very attractive materials for the realization of novel image sensors. They offer low cost synthesis, compatibility with a variety of substrates and processing on large area. The tunable band gap enables selective light detection from the visible wavelengths up to the short-wave-infrared (SWIR). This work describes the roadmap towards the integration of quantum dot photodiodes (QDPD) on top of a Si based CMOS read-out circuit. Photodiodes using an n-p junction architecture are fabricated on Si substrates, showing a dark current of 30 nA/cm ² at -1 V reverse bias, EQE above 20% and specific detectivity above 1012 cm Hz ^1/2 W ^-1 at the wavelength of 940 nm. Efficiency is improved by reducing absorption in the top contact through optical design. Furthermore, photolithographic patterning of the thin-film stack is introduced for the first time, showing the feasibility of pixel pitches down to 40 μm, opening the way towards high resolution monolithic infrared imagers and the incorporation of infrared and visible sensitive pixels side by side.

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Georgitzikis E. et al. Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging // IEEE Sensors Journal. 2020. Vol. 20. No. 13. pp. 6841-6848.

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Georgitzikis E., Malinowski P. E., Li Y., Maes J., Hagelsieb L. M., Guerrieri S., Hens Z., Heremans P., Cheyns D. Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging // IEEE Sensors Journal. 2020. Vol. 20. No. 13. pp. 6841-6848.

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TY - JOUR

DO - 10.1109/jsen.2019.2933741

UR - https://doi.org/10.1109/jsen.2019.2933741

TI - Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging

T2 - IEEE Sensors Journal

AU - Georgitzikis, Epimitheas

AU - Malinowski, Pawel E

AU - Li, Yunlong

AU - Maes, Jorick

AU - Hagelsieb, Luis Moreno

AU - Guerrieri, Stefano

AU - Hens, Zeger

AU - Heremans, Paul

AU - Cheyns, David

PY - 2020

DA - 2020/07/01

PB - Institute of Electrical and Electronics Engineers (IEEE)

SP - 6841-6848

IS - 13

VL - 20

SN - 1530-437X

SN - 1558-1748

SN - 2379-9153

ER -

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@article{2020_Georgitzikis,

author = {Epimitheas Georgitzikis and Pawel E Malinowski and Yunlong Li and Jorick Maes and Luis Moreno Hagelsieb and Stefano Guerrieri and Zeger Hens and Paul Heremans and David Cheyns},

title = {Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging},

journal = {IEEE Sensors Journal},

year = {2020},

volume = {20},

publisher = {Institute of Electrical and Electronics Engineers (IEEE)},

month = {jul},

url = {https://doi.org/10.1109/jsen.2019.2933741},

number = {13},

pages = {6841--6848},

doi = {10.1109/jsen.2019.2933741}

}

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Georgitzikis, Epimitheas, et al. “Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging.” IEEE Sensors Journal, vol. 20, no. 13, Jul. 2020, pp. 6841-6848. https://doi.org/10.1109/jsen.2019.2933741.