Institute of Electrical and Electronics Engineers (IEEE)

IEEE Electron Device Letters

, том 39 , издание 2 , страницы 308-311

An Artificial Neuron Based on a Threshold Switching Memristor

Тип публикации: Journal Article

Дата публикации: 2018-02-01

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Electron Device Letters

scimago Q1

wos Q2

БС1

SJR: 1.15

CiteScore: 7.6

Impact factor: 4.5

ISSN: 07413106, 15580563

DOI: 10.1109/led.2017.2782752

Скопировать DOI

Electronic, Optical and Magnetic Materials

Electrical and Electronic Engineering

Краткое описание

Artificial neurons and synapses are critical units for processing intricate information in neuromorphic systems. Memristors are frequently engineered as artificial synapses due to their simple structures, gradually changing conductance and high-density integration. However, few studies have designed memristors as artificial neurons. In this letter, we demonstrate an integration-and-fire artificial neuron based on a Ag/SiO ₂ /Au threshold switching memristor. This neuron displays four critical features for action-potential-based computing: the all-or-nothing spiking of an action potential, threshold-driven spiking, a refractory period, and a strength-modulated frequency response. As a post-synaptic neuron, the designed neuron was demonstrated to be applicable to digit recognition. These results demonstrate that the developed artificial neuron can realize the basic functions of spiking neurons and has great potential for neuromorphic computing.

Найдено

Для доступа к списку цитирований публикации необходимо авторизоваться.

Войти с ORCID

Для доступа к списку профилей, цитирующих публикацию, необходимо авторизоваться.

Войти с ORCID

Топ-30

Журналы

	5 10 15 20 25
Advanced Electronic Materials	Advanced Electronic Materials, 21, 5.8% Advanced Electronic Materials 21 публикация, 5.8%
Advanced Materials	Advanced Materials, 19, 5.25% Advanced Materials 19 публикаций, 5.25%
IEEE Transactions on Electron Devices	IEEE Transactions on Electron Devices, 17, 4.7% IEEE Transactions on Electron Devices 17 публикаций, 4.7%
IEEE Electron Device Letters	IEEE Electron Device Letters, 17, 4.7% IEEE Electron Device Letters 17 публикаций, 4.7%
Advanced Intelligent Systems	Advanced Intelligent Systems, 13, 3.59% Advanced Intelligent Systems 13 публикаций, 3.59%
Applied Physics Letters	Applied Physics Letters, 9, 2.49% Applied Physics Letters 9 публикаций, 2.49%
Advanced Functional Materials	Advanced Functional Materials, 9, 2.49% Advanced Functional Materials 9 публикаций, 2.49%
ACS applied materials & interfaces	ACS applied materials & interfaces, 7, 1.93% ACS applied materials & interfaces 7 публикаций, 1.93%
ACS Nano	ACS Nano, 7, 1.93% ACS Nano 7 публикаций, 1.93%
Nature Communications	Nature Communications, 6, 1.66% Nature Communications 6 публикаций, 1.66%
Chaos, Solitons and Fractals	Chaos, Solitons and Fractals, 6, 1.66% Chaos, Solitons and Fractals 6 публикаций, 1.66%
Nanoscale	Nanoscale, 6, 1.66% Nanoscale 6 публикаций, 1.66%
Materials Horizons	Materials Horizons, 6, 1.66% Materials Horizons 6 публикаций, 1.66%
Journal of Applied Physics	Journal of Applied Physics, 5, 1.38% Journal of Applied Physics 5 публикаций, 1.38%
Nanomaterials	Nanomaterials, 5, 1.38% Nanomaterials 5 публикаций, 1.38%
Nano Letters	Nano Letters, 5, 1.38% Nano Letters 5 публикаций, 1.38%
IEEE Transactions on Circuits and Systems I: Regular Papers	IEEE Transactions on Circuits and Systems I: Regular Papers, 5, 1.38% IEEE Transactions on Circuits and Systems I: Regular Papers 5 публикаций, 1.38%
Journal of Materials Chemistry C	Journal of Materials Chemistry C, 5, 1.38% Journal of Materials Chemistry C 5 публикаций, 1.38%
Neurocomputing	Neurocomputing, 4, 1.1% Neurocomputing 4 публикации, 1.1%
ACS Applied Electronic Materials	ACS Applied Electronic Materials, 4, 1.1% ACS Applied Electronic Materials 4 публикации, 1.1%
Acta Physica Sinica	Acta Physica Sinica, 4, 1.1% Acta Physica Sinica 4 публикации, 1.1%
International Journal of Extreme Manufacturing	International Journal of Extreme Manufacturing, 4, 1.1% International Journal of Extreme Manufacturing 4 публикации, 1.1%
Nano Energy	Nano Energy, 3, 0.83% Nano Energy 3 публикации, 0.83%
Applied Physics Reviews	Applied Physics Reviews, 3, 0.83% Applied Physics Reviews 3 публикации, 0.83%
Physical Review Applied	Physical Review Applied, 3, 0.83% Physical Review Applied 3 публикации, 0.83%
Applied Surface Science	Applied Surface Science, 3, 0.83% Applied Surface Science 3 публикации, 0.83%
Neuromorphic Computing and Engineering	Neuromorphic Computing and Engineering, 3, 0.83% Neuromorphic Computing and Engineering 3 публикации, 0.83%
Advanced Science	Advanced Science, 3, 0.83% Advanced Science 3 публикации, 0.83%
Small	Small, 3, 0.83% Small 3 публикации, 0.83%
	5 10 15 20 25

Издатели

	10 20 30 40 50 60 70 80 90
Wiley	Wiley, 85, 23.48% Wiley 85 публикаций, 23.48%
Institute of Electrical and Electronics Engineers (IEEE)	Institute of Electrical and Electronics Engineers (IEEE), 71, 19.61% Institute of Electrical and Electronics Engineers (IEEE) 71 публикация, 19.61%
Elsevier	Elsevier, 44, 12.15% Elsevier 44 публикации, 12.15%
Springer Nature	Springer Nature, 29, 8.01% Springer Nature 29 публикаций, 8.01%
American Chemical Society (ACS)	American Chemical Society (ACS), 27, 7.46% American Chemical Society (ACS) 27 публикаций, 7.46%
AIP Publishing	AIP Publishing, 23, 6.35% AIP Publishing 23 публикации, 6.35%
IOP Publishing	IOP Publishing, 22, 6.08% IOP Publishing 22 публикации, 6.08%
Royal Society of Chemistry (RSC)	Royal Society of Chemistry (RSC), 20, 5.52% Royal Society of Chemistry (RSC) 20 публикаций, 5.52%
MDPI	MDPI, 11, 3.04% MDPI 11 публикаций, 3.04%
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences	Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, 4, 1.1% Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences 4 публикации, 1.1%
American Physical Society (APS)	American Physical Society (APS), 3, 0.83% American Physical Society (APS) 3 публикации, 0.83%
Frontiers Media S.A.	Frontiers Media S.A., 3, 0.83% Frontiers Media S.A. 3 публикации, 0.83%
American Association for the Advancement of Science (AAAS)	American Association for the Advancement of Science (AAAS), 3, 0.83% American Association for the Advancement of Science (AAAS) 3 публикации, 0.83%
Taylor & Francis	Taylor & Francis, 2, 0.55% Taylor & Francis 2 публикации, 0.55%
Science in China Press	Science in China Press, 2, 0.55% Science in China Press 2 публикации, 0.55%
Hindawi Limited	Hindawi Limited, 2, 0.55% Hindawi Limited 2 публикации, 0.55%
Japan Society of Applied Physics	Japan Society of Applied Physics, 1, 0.28% Japan Society of Applied Physics 1 публикация, 0.28%
Association for Computing Machinery (ACM)	Association for Computing Machinery (ACM), 1, 0.28% Association for Computing Machinery (ACM) 1 публикация, 0.28%
The Royal Society	The Royal Society, 1, 0.28% The Royal Society 1 публикация, 0.28%
World Scientific	World Scientific, 1, 0.28% World Scientific 1 публикация, 0.28%
University of Electronic Science and Technology of China	University of Electronic Science and Technology of China, 1, 0.28% University of Electronic Science and Technology of China 1 публикация, 0.28%
IntechOpen	IntechOpen, 1, 0.28% IntechOpen 1 публикация, 0.28%
Institution of Engineering and Technology (IET)	Institution of Engineering and Technology (IET), 1, 0.28% Institution of Engineering and Technology (IET) 1 публикация, 0.28%
Treatise	Treatise, 1, 0.28% Treatise 1 публикация, 0.28%
Pleiades Publishing	Pleiades Publishing, 1, 0.28% Pleiades Publishing 1 публикация, 0.28%
	10 20 30 40 50 60 70 80 90

Мы не учитываем публикации, у которых нет DOI.
Статистика публикаций обновляется еженедельно.

Вы ученый?

Создайте профиль, чтобы получать персональные рекомендации коллег, конференций и новых статей.

Войти с ORCID

Метрики

362

Цитировать

ГОСТ |

Цитировать

ГОСТ Скопировать

Zhang X. et al. An Artificial Neuron Based on a Threshold Switching Memristor // IEEE Electron Device Letters. 2018. Vol. 39. No. 2. pp. 308-311.

ГОСТ со всеми авторами (до 50) Скопировать

Zhang X., Wang W., Liu Q., Xiaolong Z., Wei J., Cao R., Yao Z., Zhu X., Zhang F., Lv H., Long S., Luo Q. An Artificial Neuron Based on a Threshold Switching Memristor // IEEE Electron Device Letters. 2018. Vol. 39. No. 2. pp. 308-311.

RIS |

Цитировать

RIS Скопировать

TY - JOUR

DO - 10.1109/led.2017.2782752

UR - https://doi.org/10.1109/led.2017.2782752

TI - An Artificial Neuron Based on a Threshold Switching Memristor

T2 - IEEE Electron Device Letters

AU - Zhang, Xumeng

AU - Wang, Wei

AU - Liu, Qi

AU - Xiaolong, Zhao

AU - Wei, Jinsong

AU - Cao, Rongrong

AU - Yao, Zhihong

AU - Zhu, Xiaoli

AU - Zhang, Feng

AU - Lv, Hangbing

AU - Long, Shibing

AU - Luo, Qing

PY - 2018

DA - 2018/02/01

PB - Institute of Electrical and Electronics Engineers (IEEE)

SP - 308-311

IS - 2

VL - 39

SN - 0741-3106

SN - 1558-0563

ER -

BibTex |

Цитировать

BibTex (до 50 авторов) Скопировать

@article{2018_Zhang,

author = {Xumeng Zhang and Wei Wang and Qi Liu and Zhao Xiaolong and Jinsong Wei and Rongrong Cao and Zhihong Yao and Xiaoli Zhu and Feng Zhang and Hangbing Lv and Shibing Long and Qing Luo},

title = {An Artificial Neuron Based on a Threshold Switching Memristor},

journal = {IEEE Electron Device Letters},

year = {2018},

volume = {39},

publisher = {Institute of Electrical and Electronics Engineers (IEEE)},

month = {feb},

url = {https://doi.org/10.1109/led.2017.2782752},

number = {2},

pages = {308--311},

doi = {10.1109/led.2017.2782752}

}

MLA

Цитировать

MLA Скопировать

Zhang, Xumeng, et al. “An Artificial Neuron Based on a Threshold Switching Memristor.” IEEE Electron Device Letters, vol. 39, no. 2, Feb. 2018, pp. 308-311. https://doi.org/10.1109/led.2017.2782752.

Издатель

Institute of Electrical and Electronics Engineers (IEEE)

Журнал

IEEE Electron Device Letters

scimago Q1

wos Q2

БС1

SJR

1.15

CiteScore

7.6

Impact factor

4.5

ISSN

07413106 (Print)

15580563 (Electronic)