High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength
Sergey O Slipchenko
1
,
Aleksandr A Podoskin
1
,
Alexsander V Rozhkov
1
,
Nikita A Pikhtin
1
,
Ilya S Tarasov
1
,
Timur A Bagaev
2
,
Mikhail V Zverkov
2
,
Vadim P Konyaev
2
,
Yuriy V Kurniavko
2
,
Maxim A Ladugin
2
,
Aleksandr A. Marmalyuk
2
,
Anatoliy A Padalitsa
2
,
Vladimir A Simakov
2
2
Stelmakh Research and Development Institute Polyus, Moscow, Russia
|
Publication type: Journal Article
Publication date: 2013-09-01
scimago Q2
wos Q2
SJR: 0.687
CiteScore: 4.9
Impact factor: 2.5
ISSN: 10411135, 19410174
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Abstract
High-power pulse semiconductor lasers based on epitaxially integrated thyristor heterostructures were developed. The possibility of generating high-power laser light pulses with duration on the order of 100 ns at control signal amplitude on the order of 40–100 mA at extremely low turn-on thyristor voltage of 10 V was demonstrated. The values reached for the peak pulse optical power and peak pulse current were 28 W and 37 A, respectively.
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Slipchenko S. O. et al. High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength // IEEE Photonics Technology Letters. 2013. Vol. 25. No. 17. pp. 1664-1667.
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Slipchenko S. O., Podoskin A. A., Rozhkov A. V., Pikhtin N. A., Tarasov I. S., Bagaev T. A., Zverkov M. V., Konyaev V. P., Kurniavko Y. V., Ladugin M. A., Marmalyuk A. A., Padalitsa A. A., Simakov V. A. High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength // IEEE Photonics Technology Letters. 2013. Vol. 25. No. 17. pp. 1664-1667.
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TY - JOUR
DO - 10.1109/LPT.2013.2272801
UR - https://doi.org/10.1109/LPT.2013.2272801
TI - High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength
T2 - IEEE Photonics Technology Letters
AU - Slipchenko, Sergey O
AU - Podoskin, Aleksandr A
AU - Rozhkov, Alexsander V
AU - Pikhtin, Nikita A
AU - Tarasov, Ilya S
AU - Bagaev, Timur A
AU - Zverkov, Mikhail V
AU - Konyaev, Vadim P
AU - Kurniavko, Yuriy V
AU - Ladugin, Maxim A
AU - Marmalyuk, Aleksandr A.
AU - Padalitsa, Anatoliy A
AU - Simakov, Vladimir A
PY - 2013
DA - 2013/09/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 1664-1667
IS - 17
VL - 25
SN - 1041-1135
SN - 1941-0174
ER -
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BibTex (up to 50 authors)
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@article{2013_Slipchenko,
author = {Sergey O Slipchenko and Aleksandr A Podoskin and Alexsander V Rozhkov and Nikita A Pikhtin and Ilya S Tarasov and Timur A Bagaev and Mikhail V Zverkov and Vadim P Konyaev and Yuriy V Kurniavko and Maxim A Ladugin and Aleksandr A. Marmalyuk and Anatoliy A Padalitsa and Vladimir A Simakov},
title = {High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength},
journal = {IEEE Photonics Technology Letters},
year = {2013},
volume = {25},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {sep},
url = {https://doi.org/10.1109/LPT.2013.2272801},
number = {17},
pages = {1664--1667},
doi = {10.1109/LPT.2013.2272801}
}
Cite this
MLA
Copy
Slipchenko, Sergey O., et al. “High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength.” IEEE Photonics Technology Letters, vol. 25, no. 17, Sep. 2013, pp. 1664-1667. https://doi.org/10.1109/LPT.2013.2272801.