Institute of Electrical and Electronics Engineers (IEEE)

IEEE Photonics Technology Letters

, том 25 , издание 17 , страницы 1664-1667

High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength

Sergey O Slipchenko ¹

Aleksandr A Podoskin ¹

Alexsander V Rozhkov ¹

Nikita A Pikhtin ¹

Ilya S Tarasov ¹

Timur A Bagaev ²

Mikhail V Zverkov ²

Vadim P Konyaev ²

Yuriy V Kurniavko ²

Maxim A Ladugin ²

Aleksandr A. Marmalyuk ²

Anatoliy A Padalitsa ²

Vladimir A Simakov ²

Скрыть аффилиации авторов Показать аффилиации авторов: 2 аффилиации

Centre of Nanoheterostructure Physics, Ioffe Physical-Technical Institute, Russian Academy of Sciences, Saint Petersburg, Russia |

Stelmakh Research and Development Institute Polyus, Moscow, Russia |

Тип публикации: Journal Article

Дата публикации: 2013-09-01

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Photonics Technology Letters

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SJR: 0.687

CiteScore: 4.9

Impact factor: 2.5

ISSN: 10411135, 19410174

DOI: 10.1109/LPT.2013.2272801

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Electronic, Optical and Magnetic Materials

Atomic and Molecular Physics, and Optics

Electrical and Electronic Engineering

Краткое описание

High-power pulse semiconductor lasers based on epitaxially integrated thyristor heterostructures were developed. The possibility of generating high-power laser light pulses with duration on the order of 100 ns at control signal amplitude on the order of 40–100 mA at extremely low turn-on thyristor voltage of 10 V was demonstrated. The values reached for the peak pulse optical power and peak pulse current were 28 W and 37 A, respectively.

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Slipchenko S. O. et al. High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength // IEEE Photonics Technology Letters. 2013. Vol. 25. No. 17. pp. 1664-1667.

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Slipchenko S. O., Podoskin A. A., Rozhkov A. V., Pikhtin N. A., Tarasov I. S., Bagaev T. A., Zverkov M. V., Konyaev V. P., Kurniavko Y. V., Ladugin M. A., Marmalyuk A. A., Padalitsa A. A., Simakov V. A. High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength // IEEE Photonics Technology Letters. 2013. Vol. 25. No. 17. pp. 1664-1667.

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TY - JOUR

DO - 10.1109/LPT.2013.2272801

UR - https://doi.org/10.1109/LPT.2013.2272801

TI - High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength

T2 - IEEE Photonics Technology Letters

AU - Slipchenko, Sergey O

AU - Podoskin, Aleksandr A

AU - Rozhkov, Alexsander V

AU - Pikhtin, Nikita A

AU - Tarasov, Ilya S

AU - Bagaev, Timur A

AU - Zverkov, Mikhail V

AU - Konyaev, Vadim P

AU - Kurniavko, Yuriy V

AU - Ladugin, Maxim A

AU - Marmalyuk, Aleksandr A.

AU - Padalitsa, Anatoliy A

AU - Simakov, Vladimir A

PY - 2013

DA - 2013/09/01

PB - Institute of Electrical and Electronics Engineers (IEEE)

SP - 1664-1667

IS - 17

VL - 25

SN - 1041-1135

SN - 1941-0174

ER -

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@article{2013_Slipchenko,

author = {Sergey O Slipchenko and Aleksandr A Podoskin and Alexsander V Rozhkov and Nikita A Pikhtin and Ilya S Tarasov and Timur A Bagaev and Mikhail V Zverkov and Vadim P Konyaev and Yuriy V Kurniavko and Maxim A Ladugin and Aleksandr A. Marmalyuk and Anatoliy A Padalitsa and Vladimir A Simakov},

title = {High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength},

journal = {IEEE Photonics Technology Letters},

year = {2013},

volume = {25},

publisher = {Institute of Electrical and Electronics Engineers (IEEE)},

month = {sep},

url = {https://doi.org/10.1109/LPT.2013.2272801},

number = {17},

pages = {1664--1667},

doi = {10.1109/LPT.2013.2272801}

}

MLA

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Slipchenko, Sergey O., et al. “High-Power pulse semiconductor laser-thyristor emitting at 900-nm wavelength.” IEEE Photonics Technology Letters, vol. 25, no. 17, Sep. 2013, pp. 1664-1667. https://doi.org/10.1109/LPT.2013.2272801.