Institute of Electrical and Electronics Engineers (IEEE)

IEEE Photonics Technology Letters

, том 27 , издание 3 , страницы 307-310

High-power laser thyristors with high injection efficiency (λ = 890-910 nm)

Sergey O Slipchenko ¹

Aleksandr A Podoskin ¹

Alexsander V Rozhkov ¹

Nikita A Pikhtin ^{1, 2}

Ilya S Tarasov ¹

Timur A Bagaev ³

Maxim A Ladugin ³

Aleksandr A. Marmalyuk ³

Anatoliy A Padalitsa ³

Vladimir A Simakov ³

Скрыть аффилиации авторов Показать аффилиации авторов: 3 аффилиации

Ioffe Physical-Technical Institute, Russian Academy of Sciences, Saint Petersburg, Russia |

Saint Petersburg State University, Saint Petersburg, Russia |

Stel’makh Research and Development Institute Polyus, Moscow, Russia |

Тип публикации: Journal Article

Дата публикации: 2015-02-01

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Photonics Technology Letters

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SJR: 0.687

CiteScore: 4.9

Impact factor: 2.5

ISSN: 10411135, 19410174

DOI: 10.1109/LPT.2014.2370064

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Electronic, Optical and Magnetic Materials

Atomic and Molecular Physics, and Optics

Electrical and Electronic Engineering

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This letter shows an experimentally studied approach that increases injection efficiency of high-power laser thyristors emitting in the 890–910 nm spectral band. The developed laser thyristors exhibit 43-W maximum peak output power of laser pulses at 95-nm full width at half maximum duration. At the same time, the maximum amplitude of the current pulse generated in the laser-thyristor circuit reached 90 A.

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Slipchenko S. O. et al. High-power laser thyristors with high injection efficiency (λ = 890-910 nm) // IEEE Photonics Technology Letters. 2015. Vol. 27. No. 3. pp. 307-310.

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Slipchenko S. O., Podoskin A. A., Rozhkov A. V., Pikhtin N. A., Tarasov I. S., Bagaev T. A., Ladugin M. A., Marmalyuk A. A., Padalitsa A. A., Simakov V. A. High-power laser thyristors with high injection efficiency (λ = 890-910 nm) // IEEE Photonics Technology Letters. 2015. Vol. 27. No. 3. pp. 307-310.

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TY - JOUR

DO - 10.1109/LPT.2014.2370064

UR - https://doi.org/10.1109/LPT.2014.2370064

TI - High-power laser thyristors with high injection efficiency (λ = 890-910 nm)

T2 - IEEE Photonics Technology Letters

AU - Slipchenko, Sergey O

AU - Podoskin, Aleksandr A

AU - Rozhkov, Alexsander V

AU - Pikhtin, Nikita A

AU - Tarasov, Ilya S

AU - Bagaev, Timur A

AU - Ladugin, Maxim A

AU - Marmalyuk, Aleksandr A.

AU - Padalitsa, Anatoliy A

AU - Simakov, Vladimir A

PY - 2015

DA - 2015/02/01

PB - Institute of Electrical and Electronics Engineers (IEEE)

SP - 307-310

IS - 3

VL - 27

SN - 1041-1135

SN - 1941-0174

ER -

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@article{2015_Slipchenko,

author = {Sergey O Slipchenko and Aleksandr A Podoskin and Alexsander V Rozhkov and Nikita A Pikhtin and Ilya S Tarasov and Timur A Bagaev and Maxim A Ladugin and Aleksandr A. Marmalyuk and Anatoliy A Padalitsa and Vladimir A Simakov},

title = {High-power laser thyristors with high injection efficiency (λ = 890-910 nm)},

journal = {IEEE Photonics Technology Letters},

year = {2015},

volume = {27},

publisher = {Institute of Electrical and Electronics Engineers (IEEE)},

month = {feb},

url = {https://doi.org/10.1109/LPT.2014.2370064},

number = {3},

pages = {307--310},

doi = {10.1109/LPT.2014.2370064}

}

MLA

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Slipchenko, Sergey O., et al. “High-power laser thyristors with high injection efficiency (λ = 890-910 nm).” IEEE Photonics Technology Letters, vol. 27, no. 3, Feb. 2015, pp. 307-310. https://doi.org/10.1109/LPT.2014.2370064.