Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping
S.O. Slipchenko
1
,
Maxim A Ladugin
1
,
Aleksandr A. Marmalyuk
1
,
Vladimir A Simakov
1
,
Aleksandr A Podoskin
1
,
I S Golovin
1
,
Polina S Gavrina
1
,
Victor V Shamakhov
1
,
Vasilii V Zolotarev
2
,
Nikita A Pikhtin
2
,
2
Stel’makh Research and Development Institute “Polyus,”, Moscow, Russia
|
Publication type: Journal Article
Publication date: 2020-01-01
scimago Q2
wos Q2
SJR: 0.788
CiteScore: 6.0
Impact factor: 3.2
ISSN: 00189383, 15579646
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Abstract
The dynamic characteristics of a low-voltage thyristor based on an AlGaAs/GaAs heterostructure have been studied in the mode of generation of high-amplitude pulses with width of tens of nanoseconds in a circuit with low-impedance load based on an array of high-power AlGaAs/GaAs semiconductor lasers. The presented approach uses thyristors and diode laser arrays as discrete components, so it can be extended to other (not AlGaAs/GaAs-based) semiconductor lasers. It is demonstrated that a current pulse can be generated with an amplitude of 69 A and a width of 40 ns in a vertically assembled stack of an array of semiconductor lasers and thyristors. It was shown that raising the number of single thyristors does not lead to pulse broadening and makes it possible to raise several-fold the peak current amplitude to 208 A, with the peak laser emission power reaching a value of 78 W.
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Slipchenko S. et al. Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping // IEEE Transactions on Electron Devices. 2020. Vol. 67. No. 1. pp. 193-197.
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Slipchenko S., Ladugin M. A., Marmalyuk A. A., Simakov V. A., Podoskin A. A., Golovin I. S., Gavrina P. S., Shamakhov V. V., Nikolaev E. N., Zolotarev V. V., Pikhtin N. A., Bagaev T. A. Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping // IEEE Transactions on Electron Devices. 2020. Vol. 67. No. 1. pp. 193-197.
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TY - JOUR
DO - 10.1109/TED.2019.2951033
UR - https://doi.org/10.1109/TED.2019.2951033
TI - Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping
T2 - IEEE Transactions on Electron Devices
AU - Slipchenko, S.O.
AU - Ladugin, Maxim A
AU - Marmalyuk, Aleksandr A.
AU - Simakov, Vladimir A
AU - Podoskin, Aleksandr A
AU - Golovin, I S
AU - Gavrina, Polina S
AU - Shamakhov, Victor V
AU - Nikolaev, Eugene N
AU - Zolotarev, Vasilii V
AU - Pikhtin, Nikita A
AU - Bagaev, Timur A
PY - 2020
DA - 2020/01/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 193-197
IS - 1
VL - 67
SN - 0018-9383
SN - 1557-9646
ER -
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BibTex (up to 50 authors)
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@article{2020_Slipchenko,
author = {S.O. Slipchenko and Maxim A Ladugin and Aleksandr A. Marmalyuk and Vladimir A Simakov and Aleksandr A Podoskin and I S Golovin and Polina S Gavrina and Victor V Shamakhov and Eugene N Nikolaev and Vasilii V Zolotarev and Nikita A Pikhtin and Timur A Bagaev},
title = {Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping},
journal = {IEEE Transactions on Electron Devices},
year = {2020},
volume = {67},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {jan},
url = {https://doi.org/10.1109/TED.2019.2951033},
number = {1},
pages = {193--197},
doi = {10.1109/TED.2019.2951033}
}
Cite this
MLA
Copy
Slipchenko, S.O., et al. “Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping.” IEEE Transactions on Electron Devices, vol. 67, no. 1, Jan. 2020, pp. 193-197. https://doi.org/10.1109/TED.2019.2951033.