Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices

, том 67 , издание 1 , страницы 193-197

Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping

S.O. Slipchenko ¹

Maxim A Ladugin ¹

Aleksandr A. Marmalyuk ¹

Vladimir A Simakov ¹

Aleksandr A Podoskin ¹

I S Golovin ¹

Polina S Gavrina ¹

Victor V Shamakhov ¹

Eugene N Nikolaev ²

Vasilii V Zolotarev ²

Nikita A Pikhtin ²

Timur A Bagaev ²

Скрыть аффилиации авторов Показать аффилиации авторов: 2 аффилиации

Ioffe Institute, Saint Petersburg, Russia |

Stel’makh Research and Development Institute “Polyus,”, Moscow, Russia |

Тип публикации: Journal Article

Дата публикации: 2020-01-01

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices

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SJR: 0.788

CiteScore: 6.0

Impact factor: 3.2

ISSN: 00189383, 15579646

DOI: 10.1109/TED.2019.2951033

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Electronic, Optical and Magnetic Materials

Electrical and Electronic Engineering

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The dynamic characteristics of a low-voltage thyristor based on an AlGaAs/GaAs heterostructure have been studied in the mode of generation of high-amplitude pulses with width of tens of nanoseconds in a circuit with low-impedance load based on an array of high-power AlGaAs/GaAs semiconductor lasers. The presented approach uses thyristors and diode laser arrays as discrete components, so it can be extended to other (not AlGaAs/GaAs-based) semiconductor lasers. It is demonstrated that a current pulse can be generated with an amplitude of 69 A and a width of 40 ns in a vertically assembled stack of an array of semiconductor lasers and thyristors. It was shown that raising the number of single thyristors does not lead to pulse broadening and makes it possible to raise several-fold the peak current amplitude to 208 A, with the peak laser emission power reaching a value of 78 W.

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Slipchenko S. et al. Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping // IEEE Transactions on Electron Devices. 2020. Vol. 67. No. 1. pp. 193-197.

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Slipchenko S., Ladugin M. A., Marmalyuk A. A., Simakov V. A., Podoskin A. A., Golovin I. S., Gavrina P. S., Shamakhov V. V., Nikolaev E. N., Zolotarev V. V., Pikhtin N. A., Bagaev T. A. Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping // IEEE Transactions on Electron Devices. 2020. Vol. 67. No. 1. pp. 193-197.

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TY - JOUR

DO - 10.1109/TED.2019.2951033

UR - https://doi.org/10.1109/TED.2019.2951033

TI - Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping

T2 - IEEE Transactions on Electron Devices

AU - Slipchenko, S.O.

AU - Ladugin, Maxim A

AU - Marmalyuk, Aleksandr A.

AU - Simakov, Vladimir A

AU - Podoskin, Aleksandr A

AU - Golovin, I S

AU - Gavrina, Polina S

AU - Shamakhov, Victor V

AU - Nikolaev, Eugene N

AU - Zolotarev, Vasilii V

AU - Pikhtin, Nikita A

AU - Bagaev, Timur A

PY - 2020

DA - 2020/01/01

PB - Institute of Electrical and Electronics Engineers (IEEE)

SP - 193-197

IS - 1

VL - 67

SN - 0018-9383

SN - 1557-9646

ER -

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@article{2020_Slipchenko,

author = {S.O. Slipchenko and Maxim A Ladugin and Aleksandr A. Marmalyuk and Vladimir A Simakov and Aleksandr A Podoskin and I S Golovin and Polina S Gavrina and Victor V Shamakhov and Eugene N Nikolaev and Vasilii V Zolotarev and Nikita A Pikhtin and Timur A Bagaev},

title = {Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping},

journal = {IEEE Transactions on Electron Devices},

year = {2020},

volume = {67},

publisher = {Institute of Electrical and Electronics Engineers (IEEE)},

month = {jan},

url = {https://doi.org/10.1109/TED.2019.2951033},

number = {1},

pages = {193--197},

doi = {10.1109/TED.2019.2951033}

}

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Slipchenko, S.O., et al. “Low-Voltage AlGaAs/GaAs Thyristors as High-Peak-Current Pulse Switches for High-Power Semiconductor Laser Pumping.” IEEE Transactions on Electron Devices, vol. 67, no. 1, Jan. 2020, pp. 193-197. https://doi.org/10.1109/TED.2019.2951033.