Low-Voltage Thyristor Heterostructure for High-Current Pulse Generation at High Repetition Rate
S.O. Slipchenko
1
,
Aleksandr A Podoskin
1
,
Olga S Soboleva
1
,
I S Golovin
1
,
Dmitriy N Romanovich
1
,
Vladimir A Kapitonov
1
,
Alena S Kazakova
1
,
Kirill V Bakhvalov
1
,
Nikita A Pikhtin
1
,
Timur A Bagaev
2
,
Maxim A Ladugin
2
,
Anatoliy A Padalitsa
2
,
Aleksandr A. Marmalyuk
2
,
Vladimir A Simakov
2
2
Stel’makh Research and Development Institute “Polyus,”, Moscow, Russia
|
Publication type: Journal Article
Publication date: 2021-06-01
scimago Q2
wos Q2
SJR: 0.788
CiteScore: 6.0
Impact factor: 3.2
ISSN: 00189383, 15579646
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Abstract
The article presents a new design of an AlGaAs/GaAs low-voltage thyristor for efficient high-current pulse generation at high repetition rates. It is demonstrated that optimizing the low-voltage thyristor p-base doping profile by using a thin highly doped layer allows for a significant increase in the operating frequencies. This applies to both a thyristor working without an external load and a vertical stack of a thyristor with a laser diode mini bar (LDMB). It is shown that the use of a 0.1-
$\mu \text{m}$
-thick highly doped layer, formed at the side of the p-base close to the n-emitter, leads to a significant increase of the holding current, which in our case exceeds 70 mA. At the same time, we were still able to obtain a low residual voltage of 1.5 V and a high blocking voltage of 32 V. The developed low-voltage thyristors have demonstrated the possibility of generating current pulses of 30-ns duration at a repetition rate of 10/70 kHz with an amplitude of 125/110 A, as well as the efficient pumping of LDMBs and laser pulses with a peak power of 68/57.5 W, respectively.
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Slipchenko S. et al. Low-Voltage Thyristor Heterostructure for High-Current Pulse Generation at High Repetition Rate // IEEE Transactions on Electron Devices. 2021. Vol. 68. No. 6. pp. 2855-2860.
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Slipchenko S., Podoskin A. A., Soboleva O. S., Golovin I. S., Romanovich D. N., Kapitonov V. A., Kazakova A. S., Bakhvalov K. V., Pikhtin N. A., Bagaev T. A., Ladugin M. A., Padalitsa A. A., Marmalyuk A. A., Simakov V. A. Low-Voltage Thyristor Heterostructure for High-Current Pulse Generation at High Repetition Rate // IEEE Transactions on Electron Devices. 2021. Vol. 68. No. 6. pp. 2855-2860.
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TY - JOUR
DO - 10.1109/TED.2021.3072606
UR - https://doi.org/10.1109/TED.2021.3072606
TI - Low-Voltage Thyristor Heterostructure for High-Current Pulse Generation at High Repetition Rate
T2 - IEEE Transactions on Electron Devices
AU - Slipchenko, S.O.
AU - Podoskin, Aleksandr A
AU - Soboleva, Olga S
AU - Golovin, I S
AU - Romanovich, Dmitriy N
AU - Kapitonov, Vladimir A
AU - Kazakova, Alena S
AU - Bakhvalov, Kirill V
AU - Pikhtin, Nikita A
AU - Bagaev, Timur A
AU - Ladugin, Maxim A
AU - Padalitsa, Anatoliy A
AU - Marmalyuk, Aleksandr A.
AU - Simakov, Vladimir A
PY - 2021
DA - 2021/06/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 2855-2860
IS - 6
VL - 68
SN - 0018-9383
SN - 1557-9646
ER -
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BibTex (up to 50 authors)
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@article{2021_Slipchenko,
author = {S.O. Slipchenko and Aleksandr A Podoskin and Olga S Soboleva and I S Golovin and Dmitriy N Romanovich and Vladimir A Kapitonov and Alena S Kazakova and Kirill V Bakhvalov and Nikita A Pikhtin and Timur A Bagaev and Maxim A Ladugin and Anatoliy A Padalitsa and Aleksandr A. Marmalyuk and Vladimir A Simakov},
title = {Low-Voltage Thyristor Heterostructure for High-Current Pulse Generation at High Repetition Rate},
journal = {IEEE Transactions on Electron Devices},
year = {2021},
volume = {68},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {jun},
url = {https://doi.org/10.1109/TED.2021.3072606},
number = {6},
pages = {2855--2860},
doi = {10.1109/TED.2021.3072606}
}
Cite this
MLA
Copy
Slipchenko, S.O., et al. “Low-Voltage Thyristor Heterostructure for High-Current Pulse Generation at High Repetition Rate.” IEEE Transactions on Electron Devices, vol. 68, no. 6, Jun. 2021, pp. 2855-2860. https://doi.org/10.1109/TED.2021.3072606.