том 48 издание 4 страницы 1581-1584

Advanced Materials for Spintronic Based on ${\rm Zn}({\rm Si,Ge}){\rm As}_{2}$ Chalcopyrites

Тип публикацииJournal Article
Дата публикации2012-04-01
scimago Q2
wos Q3
БС2
SJR0.729
CiteScore4.8
Impact factor1.9
ISSN00189464, 19410069
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Краткое описание
${\rm A}^{\rm II}{\rm B}^{\rm IV}{\rm C}_{2}^{\rm V}$ semiconductors doped with Mn are perspective materials for spintronic. Structural, chemical and magnetic properties of these materials have been analyzed. The combinations of these compounds with the traditional semiconductors are perspective to create “system on chip” devices. The coexistence of ferromagnetic and paramagnetic phases was observed. The ferromagnetic phase is likely due to the presence of MnAs nanoclusters (3–5 nm). Paramagnetic properties appear due to Mn complexes (dimmer and trimmer).
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ГОСТ |
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Fedorchenko I. V. et al. Advanced Materials for Spintronic Based on ${\rm Zn}({\rm Si,Ge}){\rm As}_{2}$ Chalcopyrites // IEEE Transactions on Magnetics. 2012. Vol. 48. No. 4. pp. 1581-1584.
ГОСТ со всеми авторами (до 50) Скопировать
Fedorchenko I. V., Kochura A. V., Marenkin S. F., Aronov A. N., Koroleva L. I., Kilanski L., Szymczak R., Dobrowolski W., Ivanenko S., Lahderanta E. Advanced Materials for Spintronic Based on ${\rm Zn}({\rm Si,Ge}){\rm As}_{2}$ Chalcopyrites // IEEE Transactions on Magnetics. 2012. Vol. 48. No. 4. pp. 1581-1584.
RIS |
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TY - JOUR
DO - 10.1109/tmag.2011.2175482
UR - https://doi.org/10.1109/tmag.2011.2175482
TI - Advanced Materials for Spintronic Based on ${\rm Zn}({\rm Si,Ge}){\rm As}_{2}$ Chalcopyrites
T2 - IEEE Transactions on Magnetics
AU - Fedorchenko, Irina Valentinovna
AU - Kochura, Alexey V
AU - Marenkin, Sergey Fedorovich
AU - Aronov, Alexey N
AU - Koroleva, Ludmila I
AU - Kilanski, Lukasz
AU - Szymczak, Ritta
AU - Dobrowolski, Witold
AU - Ivanenko, Sergey
AU - Lahderanta, Erkki
PY - 2012
DA - 2012/04/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 1581-1584
IS - 4
VL - 48
SN - 0018-9464
SN - 1941-0069
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2012_Fedorchenko,
author = {Irina Valentinovna Fedorchenko and Alexey V Kochura and Sergey Fedorovich Marenkin and Alexey N Aronov and Ludmila I Koroleva and Lukasz Kilanski and Ritta Szymczak and Witold Dobrowolski and Sergey Ivanenko and Erkki Lahderanta},
title = {Advanced Materials for Spintronic Based on ${\rm Zn}({\rm Si,Ge}){\rm As}_{2}$ Chalcopyrites},
journal = {IEEE Transactions on Magnetics},
year = {2012},
volume = {48},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {apr},
url = {https://doi.org/10.1109/tmag.2011.2175482},
number = {4},
pages = {1581--1584},
doi = {10.1109/tmag.2011.2175482}
}
MLA
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Fedorchenko, Irina Valentinovna, et al. “Advanced Materials for Spintronic Based on ${\rm Zn}({\rm Si,Ge}){\rm As}_{2}$ Chalcopyrites.” IEEE Transactions on Magnetics, vol. 48, no. 4, Apr. 2012, pp. 1581-1584. https://doi.org/10.1109/tmag.2011.2175482.