Institute of Electrical and Electronics Engineers (IEEE)
IEEE Microwave and Wireless Technology Letters
,  том 34 ,  издание 5 ,  страницы 501-503

A 185-GHz Low-Noise Amplifier Using a 35-nm InP HEMT Process

Тип публикации: Journal Article
Дата публикации: 2024-05-01
Institute of Electrical and Electronics Engineers (IEEE)
scimago Q1
wos Q2
БС1
SJR: 1.038
CiteScore: 6.3
Impact factor: 3.4
ISSN: 2771957X, 27719588
Краткое описание
We present a four-stage, 185-GHz indium phosphide (InP) high electron mobility transistor (HEMT) low-noise amplifier (LNA) implemented with coplanar waveguide (CPW) inductive degeneration and designed with a procedure using noise measure. At 194 GHz, the LNA exhibits a peak 19.6 dB of gain with an input 1-dB compression point (P1dB) of $-$ 23.7 dBm at 190 GHz. To our knowledge, this is the first P1dB measurement over frequency for this technology. Over a frequency range covering 175 to 200 GHz, the LNA exhibits noise figure (NF) ranging from 9.8 to 11.4 dB. The amplifier consumes 22 of power and 0.77 of area. Additionally, a novel figure of merit (FoM) based on noise measure is proposed to evaluate designs across technologies independent of the number of stages.
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Tao J. et al. A 185-GHz Low-Noise Amplifier Using a 35-nm InP HEMT Process // IEEE Microwave and Wireless Technology Letters. 2024. Vol. 34. No. 5. pp. 501-503.
ГОСТ со всеми авторами (до 50) Скопировать
Tao J., LEE W., Chien J. S. C., Buckwalter J. F. A 185-GHz Low-Noise Amplifier Using a 35-nm InP HEMT Process // IEEE Microwave and Wireless Technology Letters. 2024. Vol. 34. No. 5. pp. 501-503.
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TY - JOUR
DO - 10.1109/lmwt.2024.3351069
UR - https://ieeexplore.ieee.org/document/10410426/
TI - A 185-GHz Low-Noise Amplifier Using a 35-nm InP HEMT Process
T2 - IEEE Microwave and Wireless Technology Letters
AU - Tao, Jonathan
AU - LEE, Won-Ho
AU - Chien, Jeff Shih Chieh
AU - Buckwalter, James F
PY - 2024
DA - 2024/05/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 501-503
IS - 5
VL - 34
SN - 2771-957X
SN - 2771-9588
ER -
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@article{2024_Tao,
author = {Jonathan Tao and Won-Ho LEE and Jeff Shih Chieh Chien and James F Buckwalter},
title = {A 185-GHz Low-Noise Amplifier Using a 35-nm InP HEMT Process},
journal = {IEEE Microwave and Wireless Technology Letters},
year = {2024},
volume = {34},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {may},
url = {https://ieeexplore.ieee.org/document/10410426/},
number = {5},
pages = {501--503},
doi = {10.1109/lmwt.2024.3351069}
}
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Tao, Jonathan, et al. “A 185-GHz Low-Noise Amplifier Using a 35-nm InP HEMT Process.” IEEE Microwave and Wireless Technology Letters, vol. 34, no. 5, May. 2024, pp. 501-503. https://ieeexplore.ieee.org/document/10410426/.