Institute of Electrical and Electronics Engineers (IEEE)

, pages 37-40

Numerical Simulation of 170 GHz Nanosecond Laser-Driven Switch Based on GaAs with Experimental Temperature Characteristics

Maxim Kulygin ¹

Vladimir Parshin ¹

Gregory Denisov ¹

Evgeny Serov ¹

Ilya Litovsky ¹

Alexander S. Mel'nikov ²

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Institute of Applied Physics RAS (IAP RAS),Dept. of Plasma Physics and High Power Electronics,Nizhny Novgorod,Russia |

Institute of Physics of Microstructures RAS (IPM RAS),Physics of Superconductors Department,Nizhny Novgorod,Russia |

Publication type: Proceedings Article

Publication date: 2022-11-23

Institute of Electrical and Electronics Engineers (IEEE)

DOI: 10.1109/rmc55984.2022.10079595

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Abstract

Laser-driven semiconductor switches are popular for commutating sub-terahertz radiation due to their efficiency and simplicity. However, the process of numerical simulation is complicated due to unknown characteristics and constants of real semiconductor samples. Hereby we demonstrate the results of the switch calculation for the 170 GHz band performed with the measured experimental data for the complex permittivity dependence on the temperature in GaAs. The dependence has a great impact to switching times and even to the fact of switching itself.

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Institute of Electrical and Electronics Engineers (IEEE)

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Alexander Sergeevich Melnikov