Numerical Simulation of 170 GHz Nanosecond Laser-Driven Switch Based on GaAs with Experimental Temperature Characteristics

Laser-driven semiconductor switches are popular for commutating sub-terahertz radiation due to their efficiency and simplicity. However, the process of numerical simulation is complicated due to unknown characteristics and constants of real semiconductor samples. Hereby we demonstrate the results of the switch calculation for the 170 GHz band performed with the measured experimental data for the complex permittivity dependence on the temperature in GaAs. The dependence has a great impact to switching times and even to the fact of switching itself.