PaRS: A Popularity-Aware Redundancy Scheme for In-Memory Stores
Тип публикации: Journal Article
Дата публикации: 2019-04-01
scimago Q1
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SJR: 1.156
CiteScore: 8.1
Impact factor: 3.8
ISSN: 00189340, 15579956, 23263814
Hardware and Architecture
Computational Theory and Mathematics
Software
Theoretical Computer Science
Краткое описание
In-memory store has become a key component for an increasing number of data-intensive applications like OLTP and OLAP. To be resilient to data loss incurred by transient failures, redundancy strategies are incorporated into in-memory stores. In-memory datasets are characterized by skewed popularity, because they exhibit varied access frequencies (a.k.a., number of accesses). Therefore, it is prudent to apply customized redundancy schemes with dynamic memory efficiency and access parallelisms to different in-memory datasets. In this work, we propose an adaptive redundancy scheme-PaRS-for in-memory datasets. PaRS relies on a re-stripe or replication mechanism to transform involved redundancy groups according to their workload popularity growth. With PaRS in place, a memory-efficient redundancy layout is deployed for data blocks with low access frequencies; a redundancy layout exhibiting high access parallelism is adopted for highly-accessed data blocks. Compared with existing redundancy schemes that employ simple replication or erasure coding, PaRS facilitates a configurable tradeoff between memory efficiency and access parallelism for in-memory data blocks. Quantitative evaluations using YCSB show that PaRS enables in-memory stores to exhibit higher access performance and memory efficiency than the replication scheme. Furthermore, PaRS achieves better load balancing than the erasure coding, while sustaining superb access performance and memory efficiency. In particular, under a double-fault-tolerant in-memory store of limited memory, PaRS improves access latency by 15.1 to 31.5 percent compared to 3-way replication, and PaRS enhances load balancing by more than 3.9× relative to Reed-Solomon coding.
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ГОСТ
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Zhou P. et al. PaRS: A Popularity-Aware Redundancy Scheme for In-Memory Stores // IEEE Transactions on Computers. 2019. Vol. 68. No. 4. pp. 556-569.
ГОСТ со всеми авторами (до 50)
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Zhou P., Huang J., Qin X., Xie C. PaRS: A Popularity-Aware Redundancy Scheme for In-Memory Stores // IEEE Transactions on Computers. 2019. Vol. 68. No. 4. pp. 556-569.
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TY - JOUR
DO - 10.1109/tc.2018.2876827
UR - https://doi.org/10.1109/tc.2018.2876827
TI - PaRS: A Popularity-Aware Redundancy Scheme for In-Memory Stores
T2 - IEEE Transactions on Computers
AU - Zhou, Panping
AU - Huang, Jianzhong
AU - Qin, Xiao
AU - Xie, Changsheng
PY - 2019
DA - 2019/04/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 556-569
IS - 4
VL - 68
SN - 0018-9340
SN - 1557-9956
SN - 2326-3814
ER -
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BibTex (до 50 авторов)
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@article{2019_Zhou,
author = {Panping Zhou and Jianzhong Huang and Xiao Qin and Changsheng Xie},
title = {PaRS: A Popularity-Aware Redundancy Scheme for In-Memory Stores},
journal = {IEEE Transactions on Computers},
year = {2019},
volume = {68},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {apr},
url = {https://doi.org/10.1109/tc.2018.2876827},
number = {4},
pages = {556--569},
doi = {10.1109/tc.2018.2876827}
}
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MLA
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Zhou, Panping, et al. “PaRS: A Popularity-Aware Redundancy Scheme for In-Memory Stores.” IEEE Transactions on Computers, vol. 68, no. 4, Apr. 2019, pp. 556-569. https://doi.org/10.1109/tc.2018.2876827.
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