Open Access
Open access
Proceedings of SPIE - The International Society for Optical Engineering

A low-noise, extended dynamic range 1.3 megapixel InGaAs array

Wim Vereecken 1
Urbain Van Bogget 1
THIERRY COLIN 1
Rosa-Maria Vinelli 1
Jo Das 1
Patrick Merken 2
Jan Vermeiren 1
1
 
XenICs NV (Belgium)
2
 
Royal Military Academy (Belgium)
Publication typeProceedings Article
Publication date2013-06-11
SJR0.152
CiteScore0.5
Impact factor
ISSN0277786X, 1996756X
Abstract
Xenics has designed and manufactured a 1280*1024 pixel, 17 µm pitch InGaAs array for SWIR imaging in the [0.9 - 1.7 µm] range. It will report on the first characterization results of the device. As usual for this type of room temperature operated SWIR image sensors, the detector interface is based on a CTIA stage, yielding excellent linearity, a low detector bias and hence a low and stable dark current combined with low image lag. The charge to voltage conversion factor is 40 µV/e-. The pixel interface scheme contains a CDS circuit in order to reduce the kTC noise and common mode effects. The noise is expected to be below 30 e-rms in linear mode, resulting in a dynamic range < 60 dB. Additionally the linear dynamic range is complemented with a high dynamic range logarithmic response with a saturation level < 5 nA/pixel. The information in the pixel matrix can be read via 2, 4 or 8 outputs, yielding a maximum full frame rate between 50 and 200 Hz. Each output is operating at 40 MHz pixel rate. The outputs are differential with a common mode voltage of 0.9 V and an adjustable output swing of 2 Vptp. Nevertheless the power dissipation shall be below 330 mW.
Ponomarenko Vladimir P., Popov Victor, Shuklov Ivan, Ivanov Victor V., Razumov Vladimir F.
Russian Chemical Reviews scimago Q1 wos Q1 Open Access
2024-05-22 citations by CoLab: 0 PDF Abstract  
Photosensing based on colloidal quantum dots (CQDs) is a rapidly developing area of infrared photoelectronics. The use of colloidal quantum dots markedly simplifies the manufacture, decreases the restrictions to the pixel pitch of the photosensitive elements, and reduces the production cost, which facilitates the wide use of IR sensors in various technological systems. This paper is the first exhaustive overeview of the architectures, methods of manufacturing and basic properties of photonic sensors based on colloidal quantum dots of compounds of Group II, IV and VI elements. Characteristic features of the synthesis and roles of the ligands and CQD morphology in the design of photosensors are considered in detail. The structures of photoresistive, photodiode and phototransistor elements based on HgTe, HgSe, PbS and PbSe CQDs, which are sensitive in various spectral ranges, are described. The main parameters of the most advanced optoelectronic devices based on colloidal quantum dot structures are presented. The key trends in the development of this area are analyzed.The bibliography includes 361 references.

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