Open Access
Proceedings of SPIE - The International Society for Optical Engineering
A low-noise, extended dynamic range 1.3 megapixel InGaAs array
Wim Vereecken
1
,
Urbain Van Bogget
1
,
THIERRY COLIN
1
,
Rosa-Maria Vinelli
1
,
Jo Das
1
,
Patrick Merken
2
,
Jan Vermeiren
1
1
XenICs NV (Belgium)
|
2
Royal Military Academy (Belgium)
|
Publication type: Proceedings Article
Publication date: 2013-06-11
SJR: 0.152
CiteScore: 0.5
Impact factor: —
ISSN: 0277786X, 1996756X
Abstract
Xenics has designed and manufactured a 1280*1024 pixel, 17 µm pitch InGaAs array for SWIR imaging in the [0.9 - 1.7 µm] range. It will report on the first characterization results of the device. As usual for this type of room temperature operated SWIR image sensors, the detector interface is based on a CTIA stage, yielding excellent linearity, a low detector bias and hence a low and stable dark current combined with low image lag. The charge to voltage conversion factor is 40 µV/e-. The pixel interface scheme contains a CDS circuit in order to reduce the kTC noise and common mode effects. The noise is expected to be below 30 e-rms in linear mode, resulting in a dynamic range < 60 dB. Additionally the linear dynamic range is complemented with a high dynamic range logarithmic response with a saturation level < 5 nA/pixel. The information in the pixel matrix can be read via 2, 4 or 8 outputs, yielding a maximum full frame rate between 50 and 200 Hz. Each output is operating at 40 MHz pixel rate. The outputs are differential with a common mode voltage of 0.9 V and an adjustable output swing of 2 Vptp. Nevertheless the power dissipation shall be below 330 mW.
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