Thiophene-based monolayer OFETs prepared by Langmuir techniques
Elena V. Agina
1
,
Alexey S Sizov
1
,
Askold A Trul
1
,
Oleg V Borshchev
1
,
Dmitry Y Paraschuk
2
,
Maxim A Shcherbina
1
,
Sergey N Chvalun
1
,
Publication type: Proceedings Article
Publication date: 2015-08-31
SJR: 0.146
CiteScore: 0.5
Impact factor: —
ISSN: 0277786X, 1996756X
Abstract
A novel fast, easily processible and highly reproducible approach to thiophene-based monolayer OFETs fabrication by Langmuir-Blodgett or Langmuir-Schaefer techniques was developed and successfully applied. It is based on selfassembly of organosilicon derivatives of oligothiophenes or benzothienobenzothiophene on the water-air interface. Influence of the conjugation length and the anchor group chemistry of the self-assembling molecules on the monolayer structure and electric performance of monolayer OFETs was systematically investigated. The efficient monolayer OFETs with the charge carrier mobilities up to 0.01 cm2/Vs and on/off ratio up to 106 were fabricated, and their functionality in integrated circuits under normal air conditions was demonstrated.
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Citations from 2024:
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Agina E. V. et al. Thiophene-based monolayer OFETs prepared by Langmuir techniques // Proceedings of SPIE - The International Society for Optical Engineering. 2015.
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Agina E. V., Sizov A. S., Anisimov D. S., Trul A. A., Borshchev O. V., Paraschuk D. Y., Shcherbina M. A., Chvalun S. N., Ponomarenko S. A. Thiophene-based monolayer OFETs prepared by Langmuir techniques // Proceedings of SPIE - The International Society for Optical Engineering. 2015.
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RIS
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TY - CPAPER
DO - 10.1117/12.2188338
UR - https://doi.org/10.1117/12.2188338
TI - Thiophene-based monolayer OFETs prepared by Langmuir techniques
T2 - Proceedings of SPIE - The International Society for Optical Engineering
AU - Agina, Elena V.
AU - Sizov, Alexey S
AU - Anisimov, Daniil S
AU - Trul, Askold A
AU - Borshchev, Oleg V
AU - Paraschuk, Dmitry Y
AU - Shcherbina, Maxim A
AU - Chvalun, Sergey N
AU - Ponomarenko, Sergey A
PY - 2015
DA - 2015/08/31
PB - SPIE-Intl Soc Optical Eng
SN - 0277-786X
SN - 1996-756X
ER -
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@inproceedings{2015_Agina,
author = {Elena V. Agina and Alexey S Sizov and Daniil S Anisimov and Askold A Trul and Oleg V Borshchev and Dmitry Y Paraschuk and Maxim A Shcherbina and Sergey N Chvalun and Sergey A Ponomarenko},
title = {Thiophene-based monolayer OFETs prepared by Langmuir techniques},
year = {2015},
month = {aug},
publisher = {SPIE-Intl Soc Optical Eng}
}