Open Access
Proceedings of SPIE - The International Society for Optical Engineering
The HgCdTe electron avalanche photodiode
Jeffrey D. Beck
1
,
Chang Feng Wan
1
,
Michael A Kinch
1
,
James E. Robinson
1
,
Pradip Mitra
1
,
Richard E. Scritchfield
1
,
Feng Ma
2
,
Joe C Campbell
2
1
DRS Infrared Technologies, Inc. (United States)
|
Publication type: Proceedings Article
Publication date: 2004-10-22
Quartile SCImago
— Quartile WOS
—
Impact factor: —
ISSN: 0277786X, 1996756X
Abstract
Electron injection avalanche photodiodes in SWIR to LWIR HgCdTe show gain and excess noise properties indicative of a single ionizing carrier gain process. The result is an electron avalanche photodiode (EAPD) with "ideal" APD characteristics including near noiseless gain. This paper reports results obtained on long-wave, mid-wave, and short wave cutoff infrared HgCdTe EAPDs that utilize a cylindrical "p-around-n", front side illuminated, n+/n-/p geometry that favors electron injection into the gain region. These devices are characterized by a uniform, exponential, gain voltage characteristic that is consistent with a hole-to-electron ionization coefficient ratio, k, of zero. Gains of greater than 1000 have been measured in MWIR EAPDS without any sign of avalanche breakdown. Excess noise measurements on MWIR and SWIR EAPDs show a gain independent excess noise factor at high gains that has a limiting value less than 2. At 77 K, 4.3 μm cutoff devices show excess noise factors of close to unity out to gains of 1000. The excess noise factor at room temperature on SWIR EAPDs, while still consistent with the k = 0 operation, approaches a gain independent limiting value of just under 2. The k = 0 operation is explained by the band structure of the HgCdTe. Monte Carlo modeling based on the band structure and scattering models for HgCdTe predict the measured gain and excess noise behavior. A noise equivalent input of 7.5 photons at a 10 ns pulsed signal gain of 964, measured on an MWIR APD at 77 K, provides an indication of the capability of the HgCdTe EAPD.
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- We do not take into account publications without a DOI.
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- Statistics recalculated weekly.
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Beck J. D. et al. The HgCdTe electron avalanche photodiode // Proceedings of SPIE - The International Society for Optical Engineering. 2004.
GOST all authors (up to 50)
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Beck J. D., Wan C. F., Kinch M. A., Robinson J. E., Mitra P., Scritchfield R. E., Ma F., Campbell J. C. The HgCdTe electron avalanche photodiode // Proceedings of SPIE - The International Society for Optical Engineering. 2004.
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TY - CPAPER
DO - 10.1117/12.565142
UR - https://doi.org/10.1117/12.565142
TI - The HgCdTe electron avalanche photodiode
T2 - Proceedings of SPIE - The International Society for Optical Engineering
AU - Beck, Jeffrey D.
AU - Wan, Chang Feng
AU - Kinch, Michael A
AU - Robinson, James E.
AU - Mitra, Pradip
AU - Scritchfield, Richard E.
AU - Ma, Feng
AU - Campbell, Joe C
PY - 2004
DA - 2004/10/22 00:00:00
PB - SPIE
SN - 0277-786X
SN - 1996-756X
ER -
Cite this
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@inproceedings{2004_Beck,
author = {Jeffrey D. Beck and Chang Feng Wan and Michael A Kinch and James E. Robinson and Pradip Mitra and Richard E. Scritchfield and Feng Ma and Joe C Campbell},
title = {The HgCdTe electron avalanche photodiode},
year = {2004},
month = {oct},
publisher = {SPIE}
}