Open Access
Science, volume 235, issue 4785, pages 172-176
Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices
1
Distinguished Member of Technical Staff at AT&T Bell Laboratories, Murray Hill, NJ 07974.
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Publication type: Journal Article
Publication date: 1987-01-09
Multidisciplinary
Top-30
Citations by journals
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2
4
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16
18
20
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Applied Physics Letters
19 publications, 4.91%
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Physical Review B
19 publications, 4.91%
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Journal of Applied Physics
12 publications, 3.1%
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Advanced Materials
7 publications, 1.81%
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IEEE Journal of Quantum Electronics
6 publications, 1.55%
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MRS Proceedings
5 publications, 1.29%
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Chemistry of Materials
5 publications, 1.29%
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Science
5 publications, 1.29%
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Physical Review Letters
4 publications, 1.03%
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Nature Communications
4 publications, 1.03%
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Physica Scripta
4 publications, 1.03%
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Journal Physics D: Applied Physics
4 publications, 1.03%
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Solid-State Electronics
4 publications, 1.03%
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Angewandte Chemie
4 publications, 1.03%
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Advanced Optical Materials
4 publications, 1.03%
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Nano Letters
4 publications, 1.03%
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ACS applied materials & interfaces
4 publications, 1.03%
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Applied Surface Science
3 publications, 0.78%
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Solid State Communications
3 publications, 0.78%
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Applied Physics A: Materials Science and Processing
3 publications, 0.78%
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Nature Materials
3 publications, 0.78%
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Semiconductor Science and Technology
3 publications, 0.78%
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Journal of Physics Condensed Matter
3 publications, 0.78%
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Reports on Progress in Physics
3 publications, 0.78%
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Progress in Quantum Electronics
3 publications, 0.78%
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Optical Materials
3 publications, 0.78%
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Infrared Physics and Technology
3 publications, 0.78%
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Angewandte Chemie - International Edition
3 publications, 0.78%
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ACS Nano
3 publications, 0.78%
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Citations by publishers
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10
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70
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Elsevier
69 publications, 17.83%
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American Institute of Physics (AIP)
39 publications, 10.08%
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Wiley
37 publications, 9.56%
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Springer Nature
35 publications, 9.04%
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IOP Publishing
32 publications, 8.27%
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American Physical Society (APS)
27 publications, 6.98%
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American Chemical Society (ACS)
26 publications, 6.72%
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IEEE
19 publications, 4.91%
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Royal Society of Chemistry (RSC)
11 publications, 2.84%
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American Association for the Advancement of Science (AAAS)
6 publications, 1.55%
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Materials Research Society
5 publications, 1.29%
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SPIE
4 publications, 1.03%
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Walter de Gruyter
3 publications, 0.78%
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American Vacuum Society
2 publications, 0.52%
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The Electrochemical Society
2 publications, 0.52%
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Japan Society of Applied Physics
2 publications, 0.52%
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Optical Society of America
2 publications, 0.52%
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Multidisciplinary Digital Publishing Institute (MDPI)
1 publication, 0.26%
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Frontiers Media S.A.
1 publication, 0.26%
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Cambridge University Press
1 publication, 0.26%
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Pleiades Publishing
1 publication, 0.26%
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Taylor & Francis
1 publication, 0.26%
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Chinese Physical Society
1 publication, 0.26%
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Hindawi Limited
1 publication, 0.26%
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Hans Publishers
1 publication, 0.26%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 0.26%
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10
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50
60
70
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- We do not take into account publications without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Capasso F. Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices // Science. 1987. Vol. 235. No. 4785. pp. 172-176.
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Capasso F. Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices // Science. 1987. Vol. 235. No. 4785. pp. 172-176.
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TY - JOUR
DO - 10.1126/science.235.4785.172
UR - https://doi.org/10.1126/science.235.4785.172
TI - Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices
T2 - Science
AU - Capasso, Federico
PY - 1987
DA - 1987/01/09 00:00:00
PB - American Association for the Advancement of Science (AAAS)
SP - 172-176
IS - 4785
VL - 235
SN - 0036-8075
SN - 1095-9203
ER -
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@article{1987_Capasso,
author = {Federico Capasso},
title = {Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices},
journal = {Science},
year = {1987},
volume = {235},
publisher = {American Association for the Advancement of Science (AAAS)},
month = {jan},
url = {https://doi.org/10.1126/science.235.4785.172},
number = {4785},
pages = {172--176},
doi = {10.1126/science.235.4785.172}
}
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Capasso, Federico. “Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices.” Science, vol. 235, no. 4785, Jan. 1987, pp. 172-176. https://doi.org/10.1126/science.235.4785.172.