Semiconductors, volume 41, issue 11, pages 1323-1328
Excition states in semiconductor quantum dots in the modified effective mass approximation
1
Kurdyumov Institute of the Physics of Metals, National Academy of Sciences of Ukraine, Ilyichevsk, Ukraine
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Publication type: Journal Article
Publication date: 2007-11-08
Journal:
Semiconductors
Quartile SCImago
Q3
Quartile WOS
Q4
Impact factor: 0.7
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
A new modified effective mass approximation is suggested to describe the excitonic energy spectrum of quantum dots of radii a comparable to the exciton Bohr radius a ex 0 . It is shown that, for quantum dots simulated by infinitely deep potential wells, the effective mass approximation is appropriate for describing excitons in quantum dots of radii a ≈ a ex 0 , if the reduced effective mass of the excitons, μ, is considered as a function of the radius of the quantum dot a, μ = μ(a).
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- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Pokutnyi S. I. Excition states in semiconductor quantum dots in the modified effective mass approximation // Semiconductors. 2007. Vol. 41. No. 11. pp. 1323-1328.
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Pokutnyi S. I. Excition states in semiconductor quantum dots in the modified effective mass approximation // Semiconductors. 2007. Vol. 41. No. 11. pp. 1323-1328.
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RIS
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TY - JOUR
DO - 10.1134/s1063782607110097
UR - https://doi.org/10.1134/s1063782607110097
TI - Excition states in semiconductor quantum dots in the modified effective mass approximation
T2 - Semiconductors
AU - Pokutnyi, S I
PY - 2007
DA - 2007/11/08 00:00:00
PB - Pleiades Publishing
SP - 1323-1328
IS - 11
VL - 41
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
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BibTex
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@article{2007_Pokutnyi,
author = {S I Pokutnyi},
title = {Excition states in semiconductor quantum dots in the modified effective mass approximation},
journal = {Semiconductors},
year = {2007},
volume = {41},
publisher = {Pleiades Publishing},
month = {nov},
url = {https://doi.org/10.1134/s1063782607110097},
number = {11},
pages = {1323--1328},
doi = {10.1134/s1063782607110097}
}
Cite this
MLA
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Pokutnyi, S. I.. “Excition states in semiconductor quantum dots in the modified effective mass approximation.” Semiconductors, vol. 41, no. 11, Nov. 2007, pp. 1323-1328. https://doi.org/10.1134/s1063782607110097.