Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots
A. V. Babichev
1
,
S D Komarov
2
,
Yu. S. Tkach
1
,
V. N. NEVEDOMSKIY
1
,
S. A. BLOKHIN
1
,
N. V. KRYZHANOVSKAYA
2, 3
,
A. G. GLADYSHEV
4
,
L.Ya. Karachinsky
4
,
I. I. Novikov
4
Publication type: Journal Article
Publication date: 2023-02-01
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
The results of studying the optical properties of InGaAs quantum dots are presented. Single-layer InGaAs quantum dots with a height of 5.3, 3.6 and 2.6 monolayers, as well as three-stacked layers of tunnel-uncoupled quantum dots with a height of 2.6 monolayers were formed by molecular-beam epitaxy according to the Stransky–Krastanov mechanism on GaAs substrates, using the partial capping and annealing technique. A decrease in the size of quantum dots makes it possible to carry out a blueshift of the photoluminescence spectrum maximum from 1200 to 1090 nm, and an increase in the number of QD layers makes it possible to compensate for the decrease in the peak intensity. It is shown that this type of quantum dots is suitable for creating the lasers active regions with a vertical microcavity for neuromorphic computing.
Found
Nothing found, try to update filter.
Are you a researcher?
Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
0
Total citations:
0
Cite this
GOST |
RIS |
BibTex |
MLA
Cite this
GOST
Copy
Babichev A. V. et al. Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots // Semiconductors. 2023. Vol. 57. No. 2. pp. 93-99.
GOST all authors (up to 50)
Copy
Babichev A. V., Komarov S. D., Tkach Y. S., NEVEDOMSKIY V. N., BLOKHIN S. A., KRYZHANOVSKAYA N. V., GLADYSHEV A. G., Karachinsky L., Novikov I. I. Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots // Semiconductors. 2023. Vol. 57. No. 2. pp. 93-99.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1134/s1063782623040012
UR - https://link.springer.com/10.1134/S1063782623040012
TI - Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots
T2 - Semiconductors
AU - Babichev, A. V.
AU - Komarov, S D
AU - Tkach, Yu. S.
AU - NEVEDOMSKIY, V. N.
AU - BLOKHIN, S. A.
AU - KRYZHANOVSKAYA, N. V.
AU - GLADYSHEV, A. G.
AU - Karachinsky, L.Ya.
AU - Novikov, I. I.
PY - 2023
DA - 2023/02/01
PB - Pleiades Publishing
SP - 93-99
IS - 2
VL - 57
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2023_Babichev,
author = {A. V. Babichev and S D Komarov and Yu. S. Tkach and V. N. NEVEDOMSKIY and S. A. BLOKHIN and N. V. KRYZHANOVSKAYA and A. G. GLADYSHEV and L.Ya. Karachinsky and I. I. Novikov},
title = {Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots},
journal = {Semiconductors},
year = {2023},
volume = {57},
publisher = {Pleiades Publishing},
month = {feb},
url = {https://link.springer.com/10.1134/S1063782623040012},
number = {2},
pages = {93--99},
doi = {10.1134/s1063782623040012}
}
Cite this
MLA
Copy
Babichev, A. V., et al. “Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots.” Semiconductors, vol. 57, no. 2, Feb. 2023, pp. 93-99. https://link.springer.com/10.1134/S1063782623040012.