Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures
Publication type: Journal Article
Publication date: 2024-03-01
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Abstract
The mechanism of resistive switching in Pt/HfO2(8 nm)/HfOXNY(4 nm)/TiN structures, in which there are two resistive switching modes: bipolar resistive switching and complementary resistive switching. We demonstrate that resistive switching without external current compliance is possible. It is shown experimentally that the conductivity in the low-resistance state corresponds to the space-charge-limited current. A qualitative model is proposed that describes the transition from bipolar resistive switching to complementary resistive switching using Schottky barrier modulation at the metal-insulator interface. Based on this model, an explanation is given for the degradation of the low-resistance state during endurance measurements.
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Permyakova O. O. et al. Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures // Semiconductors. 2024. Vol. 58. No. 3. pp. 250-253.
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Permyakova O. O., Rogozhin A. E., Myagonkikh A. V., Rudenko K. V. Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures // Semiconductors. 2024. Vol. 58. No. 3. pp. 250-253.
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TY - JOUR
DO - 10.1134/s1063782624030114
UR - https://link.springer.com/10.1134/S1063782624030114
TI - Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures
T2 - Semiconductors
AU - Permyakova, O O
AU - Rogozhin, A E
AU - Myagonkikh, A. V.
AU - Rudenko, K V
PY - 2024
DA - 2024/03/01
PB - Pleiades Publishing
SP - 250-253
IS - 3
VL - 58
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
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@article{2024_Permyakova,
author = {O O Permyakova and A E Rogozhin and A. V. Myagonkikh and K V Rudenko},
title = {Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures},
journal = {Semiconductors},
year = {2024},
volume = {58},
publisher = {Pleiades Publishing},
month = {mar},
url = {https://link.springer.com/10.1134/S1063782624030114},
number = {3},
pages = {250--253},
doi = {10.1134/s1063782624030114}
}
Cite this
MLA
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Permyakova, O. O., et al. “Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures.” Semiconductors, vol. 58, no. 3, Mar. 2024, pp. 250-253. https://link.springer.com/10.1134/S1063782624030114.