Journal of Communications Technology and Electronics, volume 65, issue 9, pages 1062-1104

Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis

V P Ponomarenko 1, 2
V.S. Popov 1
S. V. Popov 3
E L Chepurnov 1
1
 
Enterprise “RD&P Center “Orion”, Russian Federation State Research Center, Moscow, Russia
3
 
Shvabe JSC, Moscow, Russia
Publication typeJournal Article
Publication date2020-09-18
Quartile SCImago
Q3
Quartile WOS
Q4
Impact factor0.5
ISSN10642269, 15556557
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Radiation
Abstract
We review the synthesis methods, crystal parameters, and band structure of two-dimensional and quasi-two-dimensional materials, including graphene; group IV‒VIII transition metal dichalcogenides; 2D binary chalcogenides $${{{\text{A}}}^{{{\text{IV}}}}}{{{\text{B}}}^{{{\text{VI}}}}}$$ , $${\text{A}}_{m}^{{{\text{IV}}}}{\text{B}}_{n}^{{{\text{VI}}}}$$ , $${{{\text{A}}}^{{{\text{III}}}}}{{{\text{B}}}^{{{\text{VI}}}}}$$ , $${\text{A}}_{m}^{{{\text{III}}}}{\text{B}}_{n}^{{{\text{VI}}}}$$ , and $${{{\text{A}}}^{{{\text{II}}}}}{{{\text{B}}}^{{{\text{VI}}}}}$$ of group IV, III, and II transition metals; Ti, Zr, Hf, Bi, and Sb trichalcogenides; $${{{\text{A}}}^{{\text{V}}}}{{{\text{B}}}^{{\text{V}}}}$$ (AsN, AsP, PN, SbAs, SbN, SbP) 2D materials; $${{{\text{A}}}^{{{\text{III}}}}}{\text{N}}$$ (A = Al, Ga, In, B) 2D nitrides; monoatomic 2D materials (phosphorene P, plumbene Pb, stanene Sn, germanene Ge, silicene Si, antimonene Sb, arsenene As, bismuthene Bi, borophene B, and octo-nitrogene 8‑N); functionalized graphene and silicon carbide SiC; CO, GeO, and SnO 2D oxides; 2D transitional metal dioxides, Ge, and Sn; 2D trioxides MoO3 and WO3; and transition metal di- and trihalides.

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Ponomarenko V. P. et al. Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis // Journal of Communications Technology and Electronics. 2020. Vol. 65. No. 9. pp. 1062-1104.
GOST all authors (up to 50) Copy
Ponomarenko V. P., Popov V., Popov S. V., Chepurnov E. L. Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis // Journal of Communications Technology and Electronics. 2020. Vol. 65. No. 9. pp. 1062-1104.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1134/s1064226920090090
UR - https://doi.org/10.1134/s1064226920090090
TI - Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis
T2 - Journal of Communications Technology and Electronics
AU - Ponomarenko, V P
AU - Popov, V.S.
AU - Popov, S. V.
AU - Chepurnov, E L
PY - 2020
DA - 2020/09/18 00:00:00
PB - Pleiades Publishing
SP - 1062-1104
IS - 9
VL - 65
SN - 1064-2269
SN - 1555-6557
ER -
BibTex |
Cite this
BibTex Copy
@article{2020_Ponomarenko,
author = {V P Ponomarenko and V.S. Popov and S. V. Popov and E L Chepurnov},
title = {Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis},
journal = {Journal of Communications Technology and Electronics},
year = {2020},
volume = {65},
publisher = {Pleiades Publishing},
month = {sep},
url = {https://doi.org/10.1134/s1064226920090090},
number = {9},
pages = {1062--1104},
doi = {10.1134/s1064226920090090}
}
MLA
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MLA Copy
Ponomarenko, V. P., et al. “Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis.” Journal of Communications Technology and Electronics, vol. 65, no. 9, Sep. 2020, pp. 1062-1104. https://doi.org/10.1134/s1064226920090090.
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